Download PDFBCW71 SAMSUNG
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-SAMSUNG SEMICONDUCTOR INC 14€ 0 ff 7964242 gooz218. 2 I Bcw71 NPN EPITAXIAL SILICON TRANSISTOR a a nN RESUS | GENERAL PURPOSE TRANSISTOR i S0T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C) . 7 : | Characteristic [ symbor | rating _| Unit Lr, : | Cokector-Base Voltage Vewo 60 v . Vie Rates H } Collector-Emitter Voltage Veeo 45) Vv | CROSSE | | Emitter-Base Voltage Veso 5 jv | ' 1 fe . : | Cotector Current Ic 100 mA | } Collector Dissipation | Pe 350 | mw } . Storage Temperature | Teta 160 | °c | . eee! ‘+ Refer to MMBT5088 for graphs ; 1, aso 2, Emitar9. Colector : ELECTRICAL CHARACTERISTICS (T, =25°C) : Characteristic ‘Symbol Test Condition min | typ | Max | unit | , ! Collector-Base Breakdown Voltage | BVce0 | I= 10yA, le=0 50° | | v Collector-Emitter Breakdown Voltage ; BVcco | e=2mA, la=0 45 lov = Collector-Emitter Breakdown Voltage | BVces :=2mA, Ves=0 45 Vv : Emitler-Base Breakdown Voltage | BVeg | le 10HA, =O 5s | v Collector Cutoff Current | looo Vea=20V, k=O 100 | nA * DC Current Gain Ne Vee= 5V, Ip 2mA 1 110 220 | Collector-Emitter Saturation Voltage | Vce (sat) | Ie=10mA, ls=0.5mA i | 025 | v \\ Jo=50mA, Ie=2.5mA ; 0.21 | v , Base-Emitter Saturation Voltage i Vee (sat) | =SOmA, le=2.5mA, | 0.85 Vv Base-Emitter On Voltage ! Vae(on) | le=2mA, Vec=5V os | 075) Vv Current Gain-Bandwidth Product i tr l= 10mA, Vee=5V | 300 | MHz i 1=35MHz ! Output Capacitance | Cob Ves 10V, le=0 4 | pF : i f=1MHz : Noise Figure | NF 1-=0.2mA, Vec=5V 10 | «8 | Rs=2K0, f= 1KH2 Marking & SAMSUNG SEMICONDUCTOR 488