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Document overview
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Technical content
BCW67, BCW68 PNP Silicon AF Transistors
- For general AF applications
- High current gain
- Low collector-emitter saturation voltage
- Complementary types: BCW66... (NPN)
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101 Type Marking Pin Configuration Package BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H DAs DBs DCs DFs DGs DHs 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
BCW67, BCW68 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BCW67 BCW68 VCEO V Collector-base voltage BCW67 BCW68 VCBO Emitter-base voltage VEBO 5 Collector current IC 800 mA Peak collector current, tp ≤ 10 ms ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS ≤ 79°C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 215 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCW67 IC = 10 mA, IB = 0 , BCW68 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 , BCW67 IC = 10 µA, IE = 0 , BCW68 V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 VCB = 32 V, IE = 0 , TA = 150 °C; BCW67 VCB = 45 V, IE = 0 , TA = 150 °C; BCW68 ICBO 0.02 0.02 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 20 nA DC current gain1) IC = 100 µA, VCE = 10 V, hFE-grp.A/F IC = 100 µA, VCE = 10 V, hFE-grp.B/G IC = 100 µA, VCE = 10 V, hFE-grp.C/H IC = 10 mA, VCE = 1 V, hFE-grp.A/F IC = 10 mA, VCE = 1 V, hFE-grp.B/G IC = 10 mA, VCE = 1 V, hFE-grp.C/H IC = 100 mA, VCE = 1 V, hFE-grp.A/F IC = 100 mA, VCE = 1 V, hFE-grp.B/G IC = 100 mA, VCE = 1 V, hFE-grp.C/H IC = 500 mA, VCE = 2 V, hFE-grp.A/F IC = 500 mA, VCE = 2 V, hFE-grp.B/G IC = 500 mA, VCE = 2 V, hFE-grp.C/H hFE 120 180 100 160 250 100 160 250 350 250 400 630
BCW67, BCW68 Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat 0.3 0.7 V Base emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat 1.25 AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 6 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 60 - 1Pulse test: t < 300µs; D < 2%
BCW67, BCW68 DC current gain hFE = ƒ(IC) VCE = 1 V 10 10 10 10 BCW 67/68 EHP00403 h mA-1 0 23 FE 310 102 010 101 110 100 -50 555 CΙ Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 0 600 BCW 67/68 EHP00402 VCE sat mA mV200 400 800 150 -50 CΙ Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 10 03 BCW 67/68 EHP00401 VBE sat mA V12 4 150 -50 CΙ Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 0 50 100 150 BCW 67/68 EHP00400 TA nA Ι CB0 max typ
BCW67, BCW68 Transition frequency fT = ƒ(IC) VCE = 5 V 10 10 10 10 BCW 67/68 EHP00398 f mA MHz 01 23 5 T 310 102 110 CΙ Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 2 4 6 8 10 12 14 16 V 20 VCB/VEB pF CCB/CEB CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 A 1500 120 150 180 210 240 270 300 V 360 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) EHP00399BCW 67/68 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt
BCW67, BCW68Package SOT23 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2
0.25 M BC
1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)
BCW67, BCW68 Edition 2009-11-16 Published by Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.