BCW66F

BCW66F_07 INFINEON

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 7

Technical content

NPN Silicon AF Transistors

• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* EFs EFs EGs EGs EHs EHs 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 * Shrinked chip version Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 45 V Collector-base voltage VCBO 75 Emitter-base voltage VEBO 5 Collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation- T S ≤ 79 °C, BCW66 TS ≤ 115 °C, BCW66K Ptot 330 500 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request

Parameter Symbol Value Unit Junction - soldering point1) BCW66 BCW66K RthJS ≤ 215 ≤ 70 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO 45 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 75 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C ICBO 0.02 µA Emitter-base cutoff current VEB = 5 V, IC = 0 IEBO - - 20 nA DC current gain2) IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H IC = 100 mA, VCE = 1 V, hFE-grp.F IC = 100 mA, VCE = 1 V, hFE-grp.G IC = 100 mA, VCE = 1 V, hFE-grp.H IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H hFE 110 180 100 160 250 160 250 350 250 400 630 Collector-emitter saturation voltage2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat 0.3 0.45 V Base emitter saturation voltage2) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat 1.25 1.25 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2%

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 170 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, BCW66 VCB = 10 V, f = 1 MHz, BCW66K Ccb pF Emitter-base capacitance V EB = 0.5 V, f = 1 MHz, BCW66 VEB = 0.5 V, f = 1 MHz, BCW66K Ceb

DC current gain hFE = ƒ(IC) VCE = 1 V 10 10 10 10 BCW 65/66 EHP00396 h mA-1 0 2 3 FE 310 102 010 101 110 100 -50 555 CΙ Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 0 600 BCW 65/66 EHP00395 VCE sat mA mV200 400 800 150 -50 CΙ Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 10 03 BCW 65/66 EHP00394 VBE sat mA ΙC V12 4 150 -50˚C Collector cutoff current ICBO = ƒ(TA) VCB = VCEmax 10 0 50 100 150 BCW 65/66 EHP00393 TA nA ΙCB0 max typ

Transition frequency fT = ƒ(IC) VCE = 5 V EHP00391BCW 65/66 03 10mA 110 310 101 102 102 C Tf MHz Ι Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) BCW66: - - - , BCW66K: ____ 0 2 4 6 8 10 12 14 16 V 20 CCB/CEB pF VCB/VEB CEB: BCW66 CEB: BCW66K CCB: BCW66 CCB: BCW66K Total power dissipation Ptot = ƒ(TS) BCW66: - - - , BCW66K: ____ 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 250 300 350 400 450 mW 550 Ptot BCW66K BCW66 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) EHP00392BCW 65/66 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2

0.25 M BC

1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)

81726 München, Germany

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