BCW66 ZETEX

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

PARTMARKING DETAILS – BCW66F – EF BCW66FR – 7P BCW66G – EG BCW66GR – 5T BCW66H – EH BCW66HR – 7M COMPLEMENTARY TYPE – BCW68 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5V Continuous Collector Current I C 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current I B 100 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C BCW66 C B E SOT23 TBA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO 45 V I CEO=10mA V(BR)CES 75 V IC=10 µ A Emitter-Base Breakdown Voltage V (BR)EBO 5V IEBO =10 µ A Collector-Emitter Cut-off Current ICES 20 nA µ A VCES = 45V VCES = 45V , Tamb=150°C Emitter-Base Cut-Off Current I EBO 20 nA V EBO =4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.7 V V IC=100mA, IB = 10mA IC= 500mA, IB = 50mA* Base-Emitter Saturation Voltage V BE(sat) 2VI C=500mA, IB=50mA* Static Forward Current Transfer BCW66F h FE 75 100 35 160 250 I C= 10mA, V CE = 1V IC=100mA, VCE= 1V* IC=500mA, VCE = 2V* BCW66G h FE 110 160 250 400 I C= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* BCW66H h FE 180 250 100 350 630 I C= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* Transition Frequency f T 100 MHz I C =20mA, V CE =10V f = 100MHz Output Capacitance C obo 8 1 2 p F V CB =10V, f =1MHz Input Capacitance C ibo 80 pF V EB =0.5V, f =1MHz Noise Figure N 2 10 dB I C= 0.2mA, VCE = 5V RG =1kΩ Switching times: Turn-On Time Turn-Off Time t on toff 100 400 ns ns IC=150mA IB1=- I B2 =15mA RL=150 Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. BCW66 TBA