Download PDFBCW65 INFINEON
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Technical content
BCW65, BCW66
1 Jul-10-2001
/G01 For general AF applications /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Complementary types: BCW67, BCW68 (PNP) VPS05161 Type Marking Pin Configuration Package BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H EAs EBs ECs EFs EGs EHs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BCW65 BCW66 Unit Collector-emitter voltage VCEO 32 45 V Collector-base voltage VCBO 60 75 Emitter-base voltage VEBO 5 5 DC collector current IC 800 mA Peak collector current ICM 1 A Base current mA100IB Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BCW65, BCW66
2 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW65 BCW66 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IB = 0 BCW65 BCW66 V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 BCW65 BCW66 ICBO nA Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C BCW65 BCW66 ICBO µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 20 nA DC current gain 1) IC = 100 µA, VCE = 10 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE DC current gain 1) IC = 10 mA, VCE = 1 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE 110 180 DC current gain 1) I C = 100 mA, VCE = 1 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE 100 160 250 160 250 350 250 400 630 1) Pulse test: t ≤ 300µs, D = 2%
BCW65, BCW66
3 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE 100 Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat 0.3 0.7 V Base-emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat 1.25 AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 170 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 6 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 60 -
BCW65, BCW66
4 Jul-10-2001
Transition frequency fT = f (IC) VCE = 5V EHP00391BCW 65/66 03 10mA 110 310 101 102 102 C Tf MHz Ι Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00392BCW 65/66 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt Collector cutoff current ICBO = f (TA) VCB = VCEmax 10 0 50 100 150 BCW 65/66 EHP00393 TA nA ΙCB0 max typ
BCW65, BCW66
5 Jul-10-2001
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 10 0 600 BCW 65/66 EHP00395 VCE sat mA mV200 400 800 150 -50 CΙ Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 03 BCW 65/66 EHP00394 VBE sat mA ΙC V12 4 150 -50˚C DC current gain hFE = f (IC) VCE = 1V 10 10 10 10 BCW 65/66 EHP00396 h mA-1 0 2 3 FE 310 102 010 101 110 100 -50 555 CΙ