BCW65 DIODES

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PARTMARKING DETAILS – BCW65A – EA BCW65AR – 4V BCW65B – EB BCW65BR – 5V BCW65C – EC BCW65CR – 6V BCW66F – EF BCW66FR – 7P BCW66G – EG BCW66GR – 5T BCW66H – EH BCW66HR – 7M COMPLEMENTARY TYPES – BCW65 – BCW67 BCW66 – BCW68 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage V CBO 60 75 V Collector-Emitter Voltage V CEO 32 45 V Emitter-Base Voltage V EBO 5V Continuous Collector Current I C 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current I B 100 mA Power Dissipation at Tamb=25°C P tot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage BCW65 BCW66 V(BR)CEO 32 VI CEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 V IC=10µA IC=10µA Emitter-Base Breakdown Voltage V (BR)EBO 5V IEBO =10µA Collector-Emitter Cut-off Current BCW65 BCW66 ICES 20 nA µA nA µA VCES = 32V VCES = 32V ,Tamb=150oC VCES = 45V VCES = 45V ,Tamb=150oC Emitter-Base Cut-Off Current I EBO 20 nA V EBO =4V Collector-Emitter Saturation Voltage V CE(sat) 0 . 3 0 . 7 V V IC=100mA, IB = 10mA IC= 500mA, IB =50mA* Base-Emitter Saturation Voltage V BE(SAT) 2 V I C=500mA, IB=50mA* Static Forward Current Transfer BCW65A BCW66F h FE 35 100 160 250 I C=100µA, V CE =10V IC= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* BCW65B BCW66G hFE 50 110 160 250 400 I C=100µA, V CE =10V IC= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* BCW65C BCW66H hFE 80 180 250 100 350 630 I C=100µA, V CE =10V IC= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* Transition Frequency f T 100 MHz I C =20mA, V CE =10V f = 100MHz Collector-Base Capacitance C cbo 8 1 2 p F V CBO =10V, f =1MHz Emitter-Base Capacitance C ebo 80 pF V EBO =0.5V, f =1MHz Noise Figure N 2 10 dB I C= 0.2mA, VCE = 5V RG =1kΩ Switching times: Turn-On Time Turn-Off Time t on toff 100 400 ns ns IC=150mA IB1=- IB2 =15mA RL=150Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% C B E SOT23 BCW65 BCW66 3 - 28 3 - 27

PARTMARKING DETAILS – BCW65A – EA BCW65AR – 4V BCW65B – EB BCW65BR – 5V BCW65C – EC BCW65CR – 6V BCW66F – EF BCW66FR – 7P BCW66G – EG BCW66GR – 5T BCW66H – EH BCW66HR – 7M COMPLEMENTARY TYPES – BCW65 – BCW67 BCW66 – BCW68 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage V CBO 60 75 V Collector-Emitter Voltage V CEO 32 45 V Emitter-Base Voltage V EBO 5V Continuous Collector Current I C 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current I B 100 mA Power Dissipation at Tamb=25°C P tot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage BCW65 BCW66 V(BR)CEO 32 VI CEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 V IC=10µA IC=10µA Emitter-Base Breakdown Voltage V (BR)EBO 5V IEBO =10µA Collector-Emitter Cut-off Current BCW65 BCW66 ICES 20 nA µA nA µA VCES = 32V VCES = 32V ,Tamb=150oC VCES = 45V VCES = 45V ,Tamb=150oC Emitter-Base Cut-Off Current I EBO 20 nA V EBO =4V Collector-Emitter Saturation Voltage V CE(sat) 0 . 3 0 . 7 V V IC=100mA, IB = 10mA IC= 500mA, IB =50mA* Base-Emitter Saturation Voltage V BE(SAT) 2 V I C=500mA, IB=50mA* Static Forward Current Transfer BCW65A BCW66F h FE 35 100 160 250 I C=100µA, V CE =10V IC= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* BCW65B BCW66G hFE 50 110 160 250 400 I C=100µA, V CE =10V IC= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* BCW65C BCW66H hFE 80 180 250 100 350 630 I C=100µA, V CE =10V IC= 10mA, V CE = 1V IC=100mA, VCE = 1V* IC=500mA, VCE = 2V* Transition Frequency f T 100 MHz I C =20mA, V CE =10V f = 100MHz Collector-Base Capacitance C cbo 8 1 2 p F V CBO =10V, f =1MHz Emitter-Base Capacitance C ebo 80 pF V EBO =0.5V, f =1MHz Noise Figure N 2 10 dB I C= 0.2mA, VCE = 5V RG =1kΩ Switching times: Turn-On Time Turn-Off Time t on toff 100 400 ns ns IC=150mA IB1=- IB2 =15mA RL=150Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% C B E SOT23 BCW65 BCW66 3 - 28 3 - 27