BCW60 SIEMENS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 9

Technical content

NPN Silicon AF Transistors BCW 60 BCX 70 5.91 Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs SOT-23 B E C 1 2 3 1) For detailed information see chapter Package Outlines.

  • For AF input stages and driver applications
  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types: BCW 61, BCX 71 (PNP)

Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Peak collector current ICM Collector current IC mA Junction temperature Tj ˚C Total power dissipation,TS = 71 ˚C Ptot mW Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance 100 200 330 150 – 65 … + 150 Emitter-base voltage VEB0 Peak base current IBM 200 32 45 3232 45 BCW 60 FFBCW 60 BCX 70 Junction - ambient1) Rth JA K/W Junction - soldering point Rth JS ≤ 310 ≤ 240 1) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. BCW 60 BCX 70

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. VCollector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 V(BR)CE0 nA nA µA µA Collector cutoff current VCB = 32 V BCW 60, BCW 60 FF VCB = 45 V BCX 70 VCB = 32 V,TA = 150 ˚C BCW 60, BCW 60 FF VCB = 45 V,TA = 150 ˚C BCX 70 ICB0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA BCW 60, BCW 60 FF BCX 70 V(BR)CB0 Emitter-base breakdown voltage IE = 1µA V(BR)EB0 5–– –DC current gain 1) IC = 10µA,VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 2 mA,VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 50 mA,VCE = 1 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h FE 100 120 180 250 380 100 140 200 300 460 170 250 350 500 220 310 460 630 nAEmitter cutoff current VEB = 4 V IEB0 ––2 0 1) Pulse test:t≤ 300 µs,D ≤ 2% . BCW 60 BCX 70

atTA = 25 ˚C, unless otherwise specified. VCollector-emitter saturation voltage1) IC = 10 mA,IB = 0.25 mA IC = 50 mA,IB = 1.25 mA VCEsat 0.12 0.20 0.25 0.55 Base-emitter saturation voltage1) IC = 10 mA,IB = 0.25 mA IC = 50 mA,IB = 1.25 mA VBEsat 0.70 0.83 0.85 1.05 Base-emitter voltage IC = 10µA,VCE = 5 V IC = 2 mA,VCE = 5 V IC = 50 mA,VCE = 1 V1) VBE (on) 0.55 0.52 0.65 0.78 0.75 DC characteristics MHzTransition frequency IC = 20 mA,VCE = 5 V,f = 100 MHz fT – 250 – AC characteristics pFOutput capacitance VCB = 10 V,f = 1 MHz C obo –3– Input capacitance VEB = 0.5 V,f = 1 MHz C ibo –8– kΩShort-circuit input impedance IC = 2 mA,VCE = 5 V,f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h 11e 2.7 3.6 4.5 7.5 10–4Open-circuit reverse voltage transfer ratio IC = 2 mA,VCE = 5 V,f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h 12e 1.5 2.0 2.0 3.0 UnitValuesParameter Symbol min. typ. max. 1) Pulse test:t≤ 300 µs,D ≤ 2% . BCW 60 BCX 70

atTA = 25 ˚C, unless otherwise specified. dBNoise figure IC = 0.2 mA,VCE = 5 V,RS = 2 kΩ f = 1 kHz,Δf = 200 Hz BCW 60 A to BCX 70 K BCW 60 FF, BCW 60 FN F UnitValuesParameter Symbol min. typ. max. AC characteristics –Short-circuit forward current transfer ratio IC = 2 mA,VCE = 5 V,f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h 21e 200 260 330 520 µsOpen-circuit output admittance IC = 2 mA,VCE = 5 V,f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h 22e µVEquivalent noise voltage IC = 0.2 mA,VCE = 5 V,RS = 2 kΩ f = 10 Hz … 50 Hz BCW 60 FF, BCW 60 FN Vn – – 0.135 BCW 60 BCX 70

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector-base capacitanceC CB0 =f (VCB0 ) Emitter-base capacitanceC EB0 =f (VEB0 ) Transition frequencyfT = f(IC ) VCE = 5 V BCW 60 BCX 70

Base-emitter saturation voltage IC = f(VBEsat) hFE = 40 Collector currentIC =f (VBE ) VCE = 5 V Collector-emitter saturation voltage I C = f(VCEsat) hFE = 40 DC current gainhFE = f(IC ) VCE = 5 V BCW 60 BCX 70

Collector cutoff currentICB0 = f(TA) h parameterhe = f(VCE ) IC = 2 mA h parameterhe = f(IC ) VCE = 5 V Noise figureF = f(VCE ) IC = 0.2 mA,RS = 2 kΩ ,f = 1 kHz BCW 60 BCX 70

Noise figureF = f(f) IC = 0.2 mA,RS = 2 kΩ ,VCE = 5 V Noise figureF = f(IC ) VCE = 5 V,f = 1 kHz Noise figureF = f(IC ) VCE = 5 V,f = 120 Hz Noise figureF = f(IC ) VCE = 5 V,f = 10 kHz BCW 60 BCX 70