Download PDFBCW61 VISHAY
Document overview
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- PDF pages: 3
Technical content
Features
- PNP Silicon Epitaxial Planar Transistors
- Suited for low level, low noise, low frequency applications in hybrid cicuits.
- Low Current, Low Voltage.
- As complementary types, BCW60 Series NPN transistors are recommended. Mechanical Data Case: SOT -23 Plastic Package Weight:approx. 0.008g Marking BCW61A = BA Code: BCW61B = BB BCW61C = BC BCW61D = BD Packaging Codes/Options: E8/10K per 13”reel (8mm tape), 30K/box E9/3K per 7”reel (8mm tape), 30K/box .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) 1 2 T op View .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) TO-236AB (SOT-23) Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage (VBE = 0) –VCES 32 V Collector-Emitter Voltage –VCEO 32 V Emitter-Base Voltage –VEBO 5.0 V Collector Current (DC) –IC 100 mA Peak Collector Current –ICM 200 mA Base Current (DC) –IB 50 mA Power Dissipation P tot 250 mW Maximum Junction Temperature T j 150 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance, Junction to Ambient Air R θJA 500(1) °C/W Note: (1) Mounted on FR-4 printed-ciruit board. 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) Mounting Pad Layout Pin Configuration 1.Base 2.Emitter 3.Collector
formerly General Semiconductor www.vishay.com Document Number 88171 2 09-May-02 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit DC Current Gain at –VCE = 5 V, –IC = 10 µA BCW61A h FE –––– at –VCE = 5 V, –IC = 10 µA BCW61B h FE 30 ––– at –VCE = 5 V, –IC = 10 µA BCW61C h FE 40 ––– at –VCE = 5 V, –IC = 10 µA BCW61D h FE 100 ––– at –VCE = 5 V, –IC = 2 mA BCW61A h FE 120 – 220 – at –VCE = 5 V, –IC = 2 mA BCW61B h FE 180 – 310 – at –VCE = 5 V, –IC = 2 mA BCW61C h FE 250 – 460 – at –VCE = 5 V, –IC = 2 mA BCW61D h FE 380 – 630 – at –VCE = 1 V, –IC = 50 mA BCW61A h FE 60 ––– at –VCE = 1 V, –IC = 50 mA BCW61B h FE 80 ––– at –VCE = 1 V, –IC = 50 mA BCW61C h FE 100 ––– at –VCE = 1 V, –IC = 50 mA BCW61D h FE 110 ––– Collector-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA –VCEsat 60 – 250 mV at –IC = 50 mA, –IB = 1.25 mA –VCEsat 120 – 550 mV Base-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA –VBEsat 600 – 850 mV at –IC = 50 mA, –IB = 1.25 mA –VBEsat 680 – 1050 mV Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA –VBE 600 650 750 mV at –VCE = 5 V, –IC = 10 µA –VBE – 550 – mV at –VCE = 1 V, –IC = 50 mA –VBE – 720 – mV Collector-Emiter Cut-off Current at –VCE = 32 V, VEB =0 –ICES –– 20 nA at –VCE = 32 V, VEB =0, TA = 150°C –– 20 µA Emitter-Base Cut-off Current at –VEB = 4 V, IC =0 –IEBO –– 20 nA Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 100 MHz fT 100 –– MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHZ, IE=0 C CBO – 4.5 – pF Emitter-Base Capacitance at –VEB = 0.5 V, f = 1 MHZ, IC =0 C EBO – 11 – pF Noise Figure at –VCE = 5 V,–IC = 200 µA, RS = 2 kΩ , f = 100 kHZ, B = 200Hz F – 26 d B Small Signal Current Gain BCW60A – 200 at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ BCW60B – 260 BCW60C hfe – 330 BCW60D – 520 Turn-on Time at RL = 990Ω (see fig. 1) – VCC = 10V, –Ic = 10mA, –IB(on)= IB(off)= 1mA ton – 85 150 ns Turn-off Time at RL = 990Ω (see fig. 1) – VCC = 10V, –Ic = 10mA, –IB(on)= IB(off)= 1mA toff – 480 800 ns
formerly General Semiconductor Document Number 88171 www.vishay.com 09-May-02 3 10% 90%90% 90% 10% 10% toff ts tftd tr ton INPUT OUTPUT Fig. 1 - Switching Waveforms