BCW60A SAMSUNG

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Technical content

{SAMSUNG SEMICONDUCTOR - INC aye o Brseunv2 ooozzos 4 : BCW60A - NPN EPITAXIAL SILICON TRANSISTOR - ‘GENERAL PURPOSE TRANSISTOR > a - ‘SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) ©. - . : - . Collector-Base Voltage Veoo 32 v fe Lee Collector-Emitter Voltage Veco 32 v Lf Eg Emitter-Base Voltage Veoo 6 v ' 1 fw Collector Current |. te 100 mA . Collector Dissipation Pe 360 mw Storage Temperature Tsig 150 ey * Refer to MMBT3904 for graphs . , 1. Base 2. Emitter 3. Collector ph ELECTRICAL CHARACTERISTICS (Ta=25°C) [_chrctwite [Soma |= Tot conan [in| or |_| Collector-Emitter Breakdown Voltage | BVcro | lo=2.0mA, la=0 32 v Emitter-Base Breakdown Voltage BVeso | fe=1.0nA, k=O 5 v | Collector Cutoff Current Voe=32V, Vee=O 20 nA Emitter Cutoff Current leno Ven=4V, lo=0 20 | nA | DC Current Gain tee Vee 8V, lo 2.0mA 120 220 | | Vee=6V, b=50mA 60 Collector-Emitter Saturation Voltage Vee (sat) | c= 50mA, lo=1.25mA 0.55 v Ie=10mA, ly=0,25mA 0.38 v Base-Emitter Saturation Voltage Vee (sat) | le=S0mA, lo=1.25mA 07 1.08 voy Ic=50mA, Ie=0.25mA 0.6 0.85 v | _ | ease-Emitter On Voltage Vee (on) | Vee=5V, lo=2.0mA - 0.55 0.75 vo} Current-Gain-Banawidth Product tr ic=10mA, Vce=5V 126 MHz f=1MHz Output Capacitance Cob | Vea=10V, k=O 46 pF - f=1.0MHz | Noise Figure NE e=0.2mA, Vee=5V 6 <8 Re=2KQ, f=1KHz . Tum On Time fon | Ie=10mA, ley=1mA 150 ns Tum Off Time toff Ves=3.6V, le2= 1mA 800 ns . Ri=R,=5KN, R.=9909 . Marking : a aa | Ey = . ee & SAMSUNG SEMICONDUCTOR , 478 ;