Download PDFBCW60 INFINEON
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BCW60, BCX70
1 Jan-29-2002
NPN Silicon AF Transistors /G01 For AF input stages and driver applications /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Low noise between 30 Hz and 15 kHz /G01/G02 Complementary types: BCW61, BCX71 (PNP) VPS05161 Type Marking Pin Configuration Package BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
BCW60, BCX70
2 Jan-29-2002
Parameter Symbol BCW60 BCW60FF BCX70 Unit Collector-emitter voltage VCEO 32 32 45 V Collector-base voltage VCBO 32 32 45 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW60/60FF BCX70 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IB = 0 BCW60/60FF BCX70 V(BR)CBO Emitter-base breakdown voltage IE = 1 µA, IC = 0 V(BR)EBO 5 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance
BCW60, BCX70
3 Jan-29-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 BCW60 /60FF BCX70 ICBO nA Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C BCW60 / 60FF BCX70 ICBO µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 20 nA DC current gain 1) IC = 10 µA, VCE = 5 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN hFE 100 140 200 300 460 DC current gain 1) IC = 2 mA, VCE = 5 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN hFE 120 180 250 380 170 250 350 500 220 310 460 630 DC current gain 1) IC = 50 mA, VCE = 1 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN hFE 100 1) Pulse test: t ≤=300µs, D = 2%
BCW60, BCX70
4 Jan-29-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit max.typ.min. DC Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA 0.12 0.2 V 0.25 0.55 VCEsat Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA VBEsat 0.7 0.83 0.85 1.05 0.75 VBE(ON) 0.55 0.52 0.65 0.78 Base-emitter voltage 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V AC Characteristics - 250 -fTTransition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz MHz - 3CcbCollector-base capacitance VCB = 10 V, f = 1 MHz - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz -Ceb -8 hFE-grp. A / G B / H C / J / FF D / K / FN h11eShort-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz 2.7 3.6 4.5 7.5 k/G01 Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz | hFE-grp. A / G B / H C / J/FF D / K / FN h12e 1.5 10-4 1) Pulse test: t ≤=300µs, D = 2%
BCW60, BCX70
5 Jan-29-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz | hFE-grp. A / G B / H C / J/ FF D / K / FN h21e 200 260 330 520 Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-grp. A / G B / H C / J / FF D / K / FN h22e /G01 S Noise figure IC = 100 µA, VCE = 5 V, RS = 1 k/G02 , f = 1 kHz, /G03 f = 200 Hz hFE-grp. A - K FF - FN F dB Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k/G02 , f = 10 ... 50 Hz hFE-grp. FF / FN Vn - - 0.135 µV
BCW60, BCX70
6 Jan-29-2002
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) EHP00327BCW 60/BCX 70 -1 1 10V100 pF CBOVV EBO EBOC CCBO EBOC CCBO Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00328BCW 60/BCX 70 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt Transition frequency fT = f (IC) VCE = 5V EHP00330BCW 60/BCX 70 -1 2 10mA 110 310 100 101 102 C Tf MHz Ι
BCW60, BCX70
7 Jan-29-2002
Base-emitter saturation voltage IC = f (VBEsat), hFE = 40 010 EHP00331BCW 60/BCX 70 BE satV 0.6 V 1.2 100 101 210 Ι C mA 0.2 0.4 0.8 ˚C25 100 ˚C -50 ˚C Collector-emitter saturation voltage IC = f (VCEsat), hFE = 40 010 EHP00332BCW 60/BCX 70 CEsatV V 0.5 100 101 210 Ι C mA 0.1 0.2 0.3 0.4 ˚C100 25 ˚C -50 ˚C Collector current IC = f (VBE) VCE = 5V 010 EHP00333BCW 60/BCX 70 BEV 0.5 V 1.0 10-1 100 210 Ι C mA 110 ˚C100 25 -50 ˚C ˚C DC current gain hFE = f (IC) VCE = 5V EHP00334BCW 60/BCX 70 -2 2 10mA 010 310 10-1 100 101 C FEh Ι 110 210 ˚C1005 25 ˚C -50 ˚C
BCW60, BCX70
8 Jan-29-2002
Collector cutoff current ICBO = f (TA) VCB = VCEmax 010 EHP00335BCW 60/BCX 70 AT 150 410 Ι CBO nA 50 100 010 110 310 typ max 102 h parameter he = f (IC) normalized VCE = 5V EHP00336BCW 60/BCX 70 -1 1 10mA -110 210 100 100 C eh Ι 110 CEV = 5 V11eh h12e h21e h22e h parameter he = f (VCE) normalized IC = 2mA EHP00337BCW 60/BCX 70 CEV 3010 20 0.5 1.0 1.5 2.0 h e V Ι C = 2 mA h11e 21eh 12eh 22eh Noise figure F = f (VCE) IC = 0.2mA, RS = 2k/G02 , f = 1kHz EHP00338BCW 60/BCX 70 -1 2 10V 100 101 F dB CEV
BCW60, BCX70
9 Jan-29-2002
Noise figure F = f (IC) VCE = 5V, f = 120Hz EHP00340BCW 60/BCX 70 -3 1 10mA 10-2 10-1 F 010 dB Ι C SR = 1 MΩΩ 100 k Ω10 k Ω1 k Ω500 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, RS = 2k/G02 EHP00339BCW 60/BCX 70 -2 2 10kHz 10-1 100 F 110 dB f Noise figure F = f (IC) VCE = 5V, f = 1kHz EHP00341BCW 60/BCX 70 -3 1 10mA 10-2 10-1 F 010 dB Ι C Ω= 1 MSR 100 kΩ 10 kΩ 1 kΩ 500 Ω Noise figure F = f (IC) VCE = 5V, f = 10kHz EHP00342BCW 60/BCX 70 -3 1 10mA 10-2 10-1 F 010 dB Ι C = 1 MRS 100 k 10 k 500 1 k Ω Ω Ω Ω Ω