BCW30 SAMSUNG

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SAMSUNG SEMICONDUCTOR INC = 44E D_ | 7964142 0007204 7 i BCW30 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR 7 807-23 “ABSOLUTE MAXIMUM RATINGS (Ts=25°C) - Ss ee ee : “4 +} Collector-Emitter Voltage Vero 20 v CFSE <_.” | Emitter-Base: Voltage Veso . 5.0 v . 1 fa .o Collector Current k 100 mA . A Collector Dissipation Pc 360 mw i | Storage Temperature Tstg 150 °c © Refer to MMBTS086 for graphs . 1, Base 2, Emir 3. Collector : ELECTRICAL CHARACTERISTICS (T.=25°C) - 7 a Collector-Base Breakdown Voltage | BVcso | c= 10HA, le=0 30 v Collector-Emitter Breakdown Voltage | BVcro | e=2.0mA, n=O - 20 v Collector-Emitter Breakdown Voltage | BVces =100pA, Ves=O 30 Vv Emitter-Base Breakdown Voltage BVewo te=10pA, k=O 5 Vv Collector Cutoff Current keeo Vea=20V, le=O 100 nA DC Current Gain bre Vee=5V, lo=2.0mA 215 500 - ~ | Collector-Emitter-Saturation Voltage |) Vee (sat) | k=10mA, le=0.5mA 0.3 v Base-Emitter On Voltage Vee (on) } = 2.0mA, Voe=5V 06 0.75 v Output Capacitance Cob Vee=10V, =O 7 pF 1=1MHz Noise Figure NF g=0.2mA, Vce=5V 10 B : f=1KHz, Rs=2K2 7 . Marking FA ry os : I 4 i ; & SAMSUNG SEMICONDUCTOR am “ie a Tee