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BVCEO > 60V Darlington Transistor hFE > 10k @ 100mA for High Gain IC = 500mA High Continuous Collector Current Complementary Darlington PNP Type: BCV46 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (BCV47Q) Mechanical Data Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BCV47TA AEC-Q101 ZFG 7 8 3,000 BCV47TC AEC-Q101 ZFG 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View Pin-Out Top View Device Symbol SOT23 XX SOT23 C E B ZFG = Product Type Marking Code ZFG
Document number: DS33001 Rev. 5 - 2 2 of 7 www.diodes.com January 2018 © Diodes Incorporated BCV47 Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Continuous Collector Current IC 500 mA Peak Pulse Current ICM 800 mA Base Current IB 100 mA Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 310 mW (Note 6) 350 Thermal Resistance, Junction to Ambient (Note 5) RθJA 403 °C/W(Note 6) 357 Thermal Resistance, Junction to Leads (Note 7) RθJL 350 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper in still air condition; the device is measured when operating in a steady-state condition. 6. Same as note (6), except the device is mounted on 15mm x 15mm FR-4 PCB. 7. Thermal resistance from junction to solder-point (at the end of the leads). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Document number: DS33001 Rev. 5 - 2 3 of 7 www.diodes.com January 2018 © Diodes Incorporated BCV47 Thermal Characteristics and Derating Information (@TA = +25° C, unless otherwise specified.) 0 25 50 75 100 125 1500.0 0.1 0.2 0.3 0.4 Derating Curve Temperature ( o Max Power Dissipation (W) 100μ 1m 10m 100m 1 10 100 1k0 100 150 200 250 300 350 400 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance ( o C/W) Pulse Width (s) 10m 100m 1 10 100 1k0.1 Single Pulse. Tamb=25 o C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) µ
Document number: DS33001 Rev. 5 - 2 4 of 7 www.diodes.com January 2018 © Diodes Incorporated BCV47 Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO 60 — — V ICEO = 10mA Emitter-Base Breakdown Voltage BVEBO 10 — — V IEBO = 10µ A Collector Cut-off Current ICBO — 100 nA µA VCB = 60V VCB = 60V, TA = +150° C Emitter-base Cut-off Current IEBO — <1 100 nA VEB = 4V ON CHARACTERISTICS (Note 9) Static Forward Current Transfer Ratio hFE 2,000 4,000 10,000 2,000 — — — IC = 100µ A, VCE = 1V IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V IC = 500mA, VCE = 5V Collector-Emitter Saturation Voltage VCE(SAT) — — 1.0 V IC = 100mA, IB = 0.1mA Base-Emitter Saturation Voltage VBE(SAT) — — 1.5 V IC = 100mA, IB = 0.1mA SMALL SIGNAL CHARACTERISTICS Transition Frequency fT — 170 — MHz IC = 50mA, VCE = 5V, f = 20MHz Output Capacitance COBO — 3.5 — pF VCB = 10V, f = 1MHz Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% .
Document number: DS33001 Rev. 5 - 2 5 of 7 www.diodes.com January 2018 © Diodes Incorporated BCV47 Typical Electrical Characteristics (@TA = +25° C, unless otherwise specified.) 1 10 100 1000 10000 0.2 0.4 0.6 0.8 1.0 1.2 0 500 1000 1500 2000 0.1 1 10 100 1000 100 1000 10000 100000 1000000 0 500 1000 1500 2000 0.1 0 500 1000 1500 2000 0.1 VCE(SAT) v IC Tamb=25° C IC/IB=50 IC/IB=10 VCE(SAT) (V) IC Collector Current (mA) VBE(SAT) v IC IC/IB=10 100° C 25° C -55° C VCE(SAT) (V) IC Collector Current (mA) hFE v IC VCE=10V -55° C25° C100° C IC Collector Current (mA) 25° C VCE(SAT) v IC IC/IB=10 -55° C 100° C VBE(SAT) (V) IC Collector Current (mA) VBE(ON) v IC VCE=10V 85° C 25° C -55° C VBE(ON) (V) IC Collector Current (mA) hFEGain
Document number: DS33001 Rev. 5 - 2 6 of 7 www.diodes.com January 2018 © Diodes Incorporated BCV47 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C
Document number: DS33001 Rev. 5 - 2 7 of 7 www.diodes.com January 2018 © Diodes Incorporated BCV47 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PA RTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this docume nt and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications sha ll assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use p rovided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provid ed by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com