BCV27_11 INFINEON

Document overview

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Technical content

BCV27, BCV47 NPN Silicon Darlington Transistors

  • For general AF applications
  • High collector current
  • High current gain
  • Complementary types: BCV26, BCV46 (PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 BCV47 FFs FGs 1=B 1=B 2=E 2=E 3=C 3=C SOT23 SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BCV27 BCV47 VCEO V Collector-base voltage BCV27 BCV47 VCBO Emitter-base voltage VEBO 10 Collector current IC 500 mA Peak collector current, tp ≤ 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150

BCV27, BCV47 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 210 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV27 IC = 10 mA, IB = 0 , BCV47 V(BR)CEO Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV27 IC = 100 µA, IE = 0 , BCV47 V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 10 - - V Collector-base cutoff current VCB = 30 V, IE = 0 , BCV27 VCB = 60 V, IE = 0 , BCV47 VCB = 30 V, IE = 0 , TA = 150 °C, BCV27 VCB = 60 V, IE = 0 , TA = 150 °C, BCV47 ICBO 0.1 0.1 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain1) IC = 100 µA, VCE = 1 V, BCV27 IC = 100 µA, VCE = 1 V, BCV47 IC = 10 mA, VCE = 5 V, BCV27 IC = 10 mA, VCE = 5 V, BCV47 IC = 100 mA, VCE = 5 V, BCV27 IC = 100 mA, VCE = 5 V, BCV47 IC = 0.5 A, VCE = 5 V, BCV27 IC = 0.5 A, VCE = 5 V, BCV47 hFE 4000 2000 10000 4000 20000 10000 4000 2000 Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat - - 1 V Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VBEsat - - 1.5

BCV27, BCV47 1Pulse test: t < 300µs; D < 2% Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency I C = 50 mA, VCE = 5 V, f = 100 MHz fT - 170 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - pF

BCV27, BCV47 DC current gain hFE = ƒ(IC) VCE = 5 V EHP00307BCV 27/47 -1 3 10mA 310 610 100 101 104 C FEh Ι 210 510 ˚C125 25 ˚C -55 ˚C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 010 EHP00305BCV 27/47 CEsatV 1.5 310 Ι C mA 0.5 1.0 110 210 V 150 25 ˚C -50 ˚C Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 010 EHP00304BCV 27/47 BEsatV 3.0 310 Ι C mA 1.0 2.0 110 210 V 150 25 ˚C -50 ˚C Collector cutoff current ICBO = ƒ(TA) VCB = VCEmax 010 EHP00306BCV 27/47 AT 150 410 Ι CBO nA 50 100 110 210 310 max typ

BCV27, BCV47 Transition frequency fT = ƒ(IC) VCE = 5 V EHP00303BCV 27/47 03 10mA 110 310 101 102 102 C Tf MHz Ι Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 4 8 12 16 V 22 VCB/VEB pF CCB/CEB CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 250 300 mW 400 Ptot Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) EHP00301BCV 27/47 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt

BCV27, BCV47Package SOT23 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2

0.25 M BC

1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)

BCV27, BCV47 Edition 2009-11-16 Published by Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.