Download PDFBCV26 INFINEON
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Technical content
BCV26, BCV46
1 Jul-13-2001
PNP Silicon Darlington Transistors /G01 For general AF applications /G01 High collector current /G01 High current gain /G01 Complementary types: BCV27, BCV47 (NPN) VPS05161 Type Marking Pin Configuration Package BCV26 BCV46 FDs FEs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BCV26 BCV46 Unit Collector-emitter voltage VCEO 30 60 V Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 Base current 100IB Peak base current IBM 200 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 210 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BCV26, BCV46
2 Jul-13-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCV26 BCV46 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IB = 0 BCV26 BCV46 V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 10 - - Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 BCV26 BCV46 ICBO 100 100 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C BCV26 BCV46 ICBO µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 100 µA, VCE = 1 V BCV26 BCV46 hFE 4000 2000 DC current gain 1) IC = 10 mA, VCE = 5 V BCV26 BCV46 hFE 10000 4000 DC current gain 1) I C = 100 mA, VCE = 5 V BCV26 BCV46 hFE 20000 10000 DC current gain 1) I C = 0.5 A, VCE = 5 V BCV26 BCV46 hFE 4000 2000 1) Pulse test: t ≤ 300µs, D = 2%
BCV26, BCV46
3 Jul-13-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat - - 1 V Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA VBEsat - - 1.5 AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 4.5 - pF 1) Pulse test: t ≤ 300µs, D = 2%
BCV26, BCV46
4 Jul-13-2001
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) EHP00291BCV 26/46 -1 1 10V100 pF EB0VV CB0 CB0C C EB0 EB0 C CB0 C Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 250 300 mW 400 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00292BCV 26/46 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt Transition frequency fT = f (IC) VCE = 5V EHP00294BCV 26/46 03 10mA 110 310 101 102 102 C Tf MHz Ι
BCV26, BCV46
5 Jul-13-2001
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 1000 010 EHP00296BCV 26/46 CEsatV 1.5 310 ΙC mA 0.5 1.0 110 210 V 150 25 ˚C -50˚C Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 010 EHP00295BCV 26/46 BEsatV 3.0 310 ΙC mA 1.0 2.0 110 210 V 150 25 ˚C -50˚C Collector cutoff current ICBO = f (TA) VCB = VCEmax 010 EHP00297BCV 26/46 AT 150 410 ΙCBO nA 50 100 110 210 310 max typ DC current gain hFE = f (IC) VCE = 5V EHP00298BCV 26/46 -1 3 10mA 310 610 100 101 104 C FEh Ι 210 510 ˚C125 25 ˚C -55˚C