Download PDFBCP68 INFINEON
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Technical content
1 Nov-29-2001
/G01 For general AF applications /G01 High collector current /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Complementary type: BCP69 (PNP) VPS051631 Type Marking Pin Configuration Package BCP68 BCP68-10 BCP68-16 BCP68-25 BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E 4 = C 4 = C 4 = C 4 = C SOT223 SOT223 SOT223 SOT223 Maximum Ratings Parameter Symbol UnitValues VCEO 20Collector-emitter voltage V Collector-emitter voltage V25VCES VCBOCollector-base voltage 25 V Emitter-base voltage VEBO 5 IC 1 ADC collector current Peak collector current ICM 2 Base current IB mA100 IBM 200Peak base current W1.5PtotTotal power dissipation, TS = 124 °C Junction temperature 150Tj °C Tstg -65 .. 150Storage temperature Thermal Resistance Junction - soldering point1) RthJS /G01 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Nov-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 V(BR)CEO 20 - - V Collector-emitter breakdown voltage I C = 10 µA, VBE = 0 V(BR)CES 25 - - Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 25 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 25 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 100 µA DC current gain 1) IC = 5 mA, VCE = 10 V hFE 50 - - - DC current gain 1) IC = 500 mA, VCE = 1 V BCP68 BCP68-10 BCP68-16 BCP68-25 hFE 100 160 100 160 250 375 160 250 375 DC current gain 1) IC = 1 A, VCE = 1 V hFE 60 - - Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA VCEsat - - 0.5 V Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 VBE(ON) 0.6 AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz fT - 100 - MHz 1) Pulse test: t ≤=300µs, D = 2%
3 Nov-29-2001
Transition frequency fT = f (IC) VCE = 5V EHP00275BCP 68 03 10mA 110 310 101 102 102 C Tf MHz Ι Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 0.3 0.6 0.9 1.2 W 1.8 Ptot Collector cutoff current ICBO = f (TA) VCB = 25V 010 EHP00276BCP 68 AT 150 510 ΙCBO nA 50 100 110 210 410 typ max 103 DC current gain hFE = f (IC) VCE = 1V EHP00277BCP 68 0 410mA 010 310 101 102 101 C FEh Ι 210 -50 100 ˚C25 310
4 Nov-29-2001
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 EHP00278BCP 68 CEsatV 0.4 V 0.8 100 101 310 ΙC mA 210 0.2 0.6 104 100 25 ˚C ˚C-50 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 EHP00279BCP 68 BEV ΙC sat 101 100 mA 103 104 5 ˚C100 -50 Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00280BCP 68 -6 -510 110s -110 210 310 10-4 10-3 10-2 101 0.0 0.2 0.1 0.05 0.02 0.01 0.005 D 0.5 totmax totP DC P pt tp =D T tp T