BCP54 INFINEON

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BCP54...BCP56 Nov-29-20011 NPN Silicon AF Transistors /G01 For AF driver and output stages /G01 High collector current /G01 Low collector-emitter saturation voltage /G01 Complementary types: BCP51 ... BCP53 (PNP) VPS051631 Type Marking Pin Configuration Package BCP54 BCP54-10 BCP54-16 BCP55 BCP55-10 BCP55-16 BCP56 BCP56-10 BCP56-16 BCP 54 BCP 54-10 BCP 54-16 BCP 55 BCP 55-10 BCP 55-16 BCP 56 BCP 56-10 BCP 56-16 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 4 = C 4 = C 4 = C 4 = C 4 = C 4 = C 4 = C 4 = C 4 = C SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223

BCP54...BCP56 Nov-29-20012 Maximum Ratings Parameter Symbol BCP54 BCP55 BCP56 Unit Collector-emitter voltage VCEO 45 60 80 V Collector-emitter voltage RBE /G01 1k/G02 VCER 45 60 100 Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC 1 A Peak collector current ICM 1.5 Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BCP54...BCP56 Nov-29-20013 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP54 BCP55 BCP56 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IE = 0 BCP54 BCP55 BCP56 V(BR)CBO 100 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA DC current gain 1) IC = 5 mA, VCE = 2 V hFE 25 - - - DC current gain 1) IC = 150 mA, VCE = 2 V BCP54...56 hFE-grp.10 hFE-grp.16 hFE 100 100 160 250 160 250 DC current gain 1) IC = 500 mA, VCE = 2 V hFE 25 - - Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) - - 1 AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 100 - MHz 1) Pulse test: t ≤=300µs, D = 2%

BCP54...BCP56 Nov-29-20014 Transition frequency fT = f (IC) VCE = 10V EHP00267BCP 54...56 03 10mA 110 310 101 102 102 C Tf MHz Ι Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 150 300 450 600 750 900 1050 1200 1350 1500 mA 1800 IF DC current gain hFE = f (IC) VCE = 2V EHP00268BCP 54...56 310 mA 010 310 100 101 101 C FEh Ι 210 210 C100 25 C -50C 10 4 Collector cutoff current ICBO = f (TA) VCB = 30V 010 EHP00269BCP 54...56 AT 150 410 ΙCBO nA 50 100 010 110 310 C 102 max typ

BCP54...BCP56 Nov-29-20015 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 EHP00271BCP 54...56 CEsatV 0.4 V 0.8 100 101 310 ΙC mA C210 0.2 0.6 104 100 25 C C-50 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 010 EHP00270BCP 54...56 BEsatV 410 ΙC mA 0.2 110 210 310 0.4 0.6 0.8 1.2 V C100 25 C -50 C Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00272BCP 54...56 -6 -510 010s 010 210 10-4 10-3 10-2 101 D = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 totmax totP DC P pt tp =D T tp T