BC856 INFINEON

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Technical content

BC856...BC860

1 Dec-11-2001

PNP Silicon AF Transistors /G01 For AF input stages and driver applications /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Low noise between 30 Hz and 15 kHz /G01 Complementary types: BC846, BC847, BC848 BC849, BC850 (NPN) VPS05161 Type Marking Pin Configuration Package BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A BC859B BC859C BC860B BC860C 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

BC856...BC860

2 Dec-11-2001

Parameter Symbol BC856 BC857 BC860 BC858 BC859 Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current 200IEM Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856 BC857/860 BC858/859 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 BC856 BC857/860 BC858/859 V(BR)CBO 1For calculation of RthJA please refer to Application Note Thermal Resistance

BC856...BC860

3 Dec-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC856 BC857/860 BC858/859 V(BR)CES V Emitter-base breakdown voltage IE = 1 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 15 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 5 µA DC current gain 1) IC = 10 µA, VCE = 5 V hFE-group A hFE-group B hFE-group C hFE 140 250 480 DC current gain 1) IC = 2 mA, VCE = 5 V hFE-group A hFE-group B hFE-group C hFE 125 220 420 180 290 520 250 475 800 Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat 250 300 650 mV Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat 700 850 Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 600 650 750 820 1) Pulse test: t ≤=300µs, D = 2%

BC856...BC860

4 Dec-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT - 250 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 8 - Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h11e 2.7 4.5 8.7 k/G01 Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h12e 1.5 10-4 Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h21e 200 330 600 Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h22e /G02 S Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k/G01 , f = 1 kHz, /G03 f = 200 Hz BC 859 BC 860 F - 1 4 dB Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k/G01 , f = 10 ... 50 Hz BC 860 Vn - - 0.11 µV

BC856...BC860

5 Dec-11-2001

Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 10 5 10 10 EHP00376 VCB0 CEB0 V EB0V EBOC pF CB0C -1 0 1 CCBO BC 856...860 Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00377 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt Transition frequency fT = f (IC) VCE = 5V 10 10 10 10 EHP00378 f mA MHz -1 0 1 2 5 T 310 102 110 CΙ

BC856...BC860

6 Dec-11-2001

Collector cutoff current ICBO = f (TA) VCB = 30V 0 50 100 150 EHP00381 TA nA ΙCB0 max typ C Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 EHP00380 VCEsat mA V0.3 0.5 100 -50 0.1 0.2 0.4 CΙ C C C DC current gain hFE = f (IC) VCE = 5V 10 10 10 10 EHP00382 h mA-2 -1 12 FE 310 102 010 101 010 555 100 -50 CΙ C C C Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 010 EHP00379 BEsatV 0.6 V 1.2 100 101 210 Ι C mA 0.2 0.4 0.8 C25 C100 C -50C

BC856...BC860

7 Dec-11-2001

h parameter he = f (VCE) normalized IC = 2mA 001 02 0 3 0 BC 856...860 EHP00384 VCE he V 1.0 0.5 1.5 2.0 = 2 mA h11 12h h 22 CΙ h parameter he = f (IC) normalized VCE = 5V 10 10 10 BC 856...860 EHP00383 mA-1 0 1 eh 210 -110 110 10 0 h11e h12e h21e h 22e VCE = 5 V CΙ Noise figure F = f (VCE) IC = 0.2mA, RS = 2k/G01 , f = 1kHz 10 10 10 10 BC 856...860 EHP00385 VCE F V dB - 1 012 5 5 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, RS = 2k/G01 10 10 10 10 BC 856...860 EHP00386 F kHz dB -2 -1 1 2 f 010

BC856...BC860

8 Dec-11-2001

Noise figure F = f (IC) VCE = 5V, f = 1kHz 10 10 10 10 BC 856...860 EHP00388 F mA-3 -2 0 1 -110 = 1 M 100 k 10 k dB 500 1 k ΩΩ ΩSR Ω Ω CΙ Noise figure F = f (IC) VCE = 5V, f = 120Hz 10 10 10 10 BC 856...860 EHP00387 F mA-3 -2 0 1 -110 = 1 M 100 k 10 k dB 500 1 k Ω ΩΩSR Ω Ω CΙ Noise figure F = f (IC) VCE = 5V, f = 10kHz 10 10 10 10 BC 856...860 EHP00389 mA-3 -2 0 1 -110 dB F Ι C = 1 MRS Ω Ω100 k Ω10 k500 Ω Ω1 k