Download PDFBC856 GE
Document overview
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FEATURES
Small Signal Transistors (PNP) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. SOT -23 Marking code Ty p e Marking BC856A B BC857A B C BC858A B C Symbol Value Unit Collector-Base Voltage BC856 BC857 BC858, BC859 –VCBO –VCBO –VCBO V V V Collector-Emitter Voltage BC856 BC857 BC858, BC859 CES –VCES –VCES V V V Collector-Emitter Voltage BC856 BC857 BC858, BC859 –VCEO –VCEO –VCEO V V V Emitter-Base Voltage –V EBO 5V Collector Current –I C 100 mA Peak Collector Current –I CM 200 mA Peak Base Current –I BM 200 mA Peak Emitter Current I EM 200 mA Power Dissipation at TSB = 50 °C P tot 3101) mW Junction Temperature T j 150 °C Storage T emperature Range T S –65 to +150 °C Ty p e M a r k i n g BC859A B C PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC858 and BC859 can be supplied in all three groups. The BC859 is a low noise type. As complementary types, the NPN transistors BC846 … BC849 are recommended. BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. T yp. Max. Unit h-Parameters at –VCE = 5 V , –IC = 2 mA, f = 1 kHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre 1.6 3.2 220 330 600 2.7 4.5 8.7 1.5 · 10 2 · 10–4 3 · 10–4 4.5 8.5 110 kΩ kΩ kΩ µS µS µS DC Current Gain at –V CE = 5 V , –IC = 10 µA Current Gain Group A B C at –VCE = 5 V , –IC = 2 mA Current Gain Group A B C hFE hFE hFE hFE hFE hFE 110 200 420 150 270 180 290 520 220 450 800 Thermal Resistance Junction to Substrate Backside R thSB – – 320 1) K/W Thermal Resistance Junction to Ambient Air RthJA – – 450 1) K/W Collector Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA –VCEsat –VCEsat 250 300 650 mV mV Base Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA –VBEsat –VBEsat 700 900 mV mV Base-Emitter Voltage at –VCE = 5 V , –IC = 2 mA at –VCE = 5 V , –IC = 10 mA –VBE –VBE 600 660 750 800 mV mV Collector-Emitter Cutoff Current at –VCE = 80 V BC856 at –VCE = 50 V BC857 at –VCE = 30 V BC858, BC859 at –VCE = 80 V , Tj = 125 °C BC856 at –VCE = 50 V , Tj = 125 °C BC857 at –VCE = 30 V , Tj = 125 °C BC858, BC859 at –VCB = 30 V at –VCB = 30 V , Tj = 150 °C –ICES –ICES –ICES –ICES –ICES –ICES –ICBO –ICBO 0.2 0.2 0.2 nA nA nA µA µA µA nA µA Gain-Bandwidth Product at –VCE = 5 V , –IC = 10 mA, f = 100 MHz fT – 150 – MHz 1) Device on fiberglass substrate, see layout BC856 THRU BC859
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. T yp. Max. Unit Collector-Base Capacitance at –VCB = 10 V , f = 1 MHz C CBO ––6p F Noise Figure at –VCE = 5 V , –IC = 200 µA, RG = 2 kΩ , f = 1 kHz, Δ f = 200 HzBC856, BC857, BC858 BC859 F F dB dB Noise Figure at –VCE = 5 V , –IC = 200 µA, RG = 2 kΩ , f = 30…15000 Hz BC859 F –1 . 2 4d B BC856 THRU BC859 Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)
Collector-base cutoff current versus junction temperature nA -ICBO 1000 Tj 200 °C BC856...BC859 103 104 102 10-1 Test voltage -V : equal to the given maximum value typical maximum -VCEO CBO RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859
versus base-emitter voltage mA -IC -VBE BC856...BC859 0.5 1 V -VCE = 5 V Tamb = 25 °C Collector saturation voltage versus collector current V 0.5 0.4 -VCEsat 0.3 0.2 0.1 -IC BC856...BC859 102 5 2 5 2510-1 10 mA2 -50 °C -I C = 20-I B Tamb= 1 00 °C 25 °C RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859