BC856 NXP

Document overview

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Technical content

Supersedes data of 2003 Apr 09

2004 Jan 16

BC856; BC857; BC858 PNP general purpose transistors

2004 Jan 16 2

NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858

FEATURES

  • Low current (max. 100 mA)
  • Low voltage (max. 65 V).

APPLICATIONS

  • General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. PINNING TYPE NUMBER MARKING CODE(1) BC856 3D* BC856A 3A* BC856B 3B* BC857 3H* BC857A 3E* BC857B 3F* BC857C 3G* BC858B 3K* PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage MAM256Top view Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

BC856 − plastic surface mounted package; 3 leads SOT23 BC857 − plastic surface mounted package; 3 leads SOT23 BC858 − plastic surface mounted package; 3 leads SOT23

2004 Jan 16 3

NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC856 − −80 V BC857 − −50 V BC858 − −30 V VCEO collector-emitter voltage open base BC856 − −65 V BC857 − −45 V BC858 − −30 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS TYPICAL UNIT Rth(j-a) thermal resistance from junction to ambient in free air; note 1 500 K/W

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NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: t p ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −30 V; IE = 0 − −1 −15 nA VCB = −30 V; IE = 0; Tj = 150 °C − − −4 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA hFE DC current gain IC = −2 mA; VCE = −5 V BC856 125 − 475 BC857 125 − 800 BC856A; BC857A 125 − 250 BC856B; BC857B; BC858B 220 − 475 BC857C 420 − 800 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA; note 1 − −250 −650 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −700 − mV IC = −100 mA; IB = −5 mA; note 1 − −850 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV IC = −10 mA; VCE = −5 V − − −820 mV Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 4.5 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 2 10 dB

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NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 200 300 400 500 hFE 100 MGT711 IC (mA) (1) (2) (3) Fig.2 DC current gain as a function of collector current; typical values. BC857A; VCE = −5 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage −1200 −1000 −800 −600 −400 −200 MGT712 IC (mA) VBE (mV) (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector current; typical values. BC857A; VCE = −5 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage −104 −103 −102 −10 MGT713 IC (mA) VCEsat (mV) (1) (2)(3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. BC857A; IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage MGT714 IC (mA) −1200 −1000 −800 −600 −400 −200 VBEsat (mV) (1) (2) (3) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. BC857A; IC/IB = 20. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C.

2004 Jan 16 6

NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 400 600 800 1000 hFE 200 MGT715 IC (mA) (1) (2) (3) Fig.6 DC current gain as a function of collector current; typical values. BC857B; VCE = −5 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage −1200 −1000 −800 −600 −400 −200 MGT716 IC (mA) VBE (mV) (1) (2) (3) Fig.7 Base-emitter voltage as a function of collector current; typical values. BC857B; VCE = −5 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage −104 −103 −102 −10 MGT717 IC (mA) VCEsat (mV) (1) (2)(3) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. BC857B; IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage MGT718 IC (mA) −1200 −1000 −800 −600 −400 −200 VBEsat (mV) (1) (2) (3) Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. BC857B; IC/IB = 20. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C.

2004 Jan 16 7

NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 handbook, halfpage 400 600 800 1000 hFE 200 MGT719 IC (mA) (1) (2) (3) Fig.10 DC current gain as a function of collector current; typical values. BC857C; VCE = −5 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage −1200 −1000 −800 −600 −400 −200 MGT720 IC (mA) VBE (mV) (1) (2) (3) Fig.11 Base-emitter voltage as a function of collector current; typical values. BC857C; VCE = −5 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage −104 −103 −102 −10 MGT721 IC (mA) VCEsat (mV) (1) (2)(3) Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. BC857C; IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage MGT722 IC (mA) −1200 −1000 −800 −600 −400 −200 VBEsat (mV) (1) (2) (3) Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. BC857C; IC/IB = 20. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C.

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NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 PACKAGE OUTLINE UNIT A1 max. bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 IEC JEDEC JEITA mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X HE E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface-mounted package; 3 leads SOT2 3

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NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Printed in The Netherlands R75/06/pp10 Date of release: 2004 Jan 16 Document order number: 9397 750 12397