Download PDFBC846 INFINEON
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Technical content
BC846...BC850
1 Nov-20-2002
NPN Silicon AF Transistors /G01 For AF input stages and driver applications /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Low noise between 30 Hz and 15 kHz /G01 Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP) VPS05161 Type Marking Pin Configuration Package BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs 1 = B B = 1 B = 1 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
BC846...BC850
2 Nov-20-2002
Parameter Symbol BC846 BC847 BC850 BC848 BC849 Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 6 6 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current 200IEM Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846 BC847/850 BC848/849 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846 BC847/850 BC848/849 V(BR)CBO 1For calculation of RthJA please refer to Application Note Thermal Resistance
BC846...BC850
3 Nov-20-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846 BC847/850 BC848/849 V(BR)CES V Emitter-base breakdown voltage IE = 1 µA, IC = 0 BC846/847 BC848-850 V(BR)EBO Collector cutoff current VCB = 40 V, IE = 0 ICBO - - 15 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 5 µA DC current gain 1) IC = 10 µA, VCE = 5 V hFE-group A hFE-group B hFE-group C hFE 140 250 480 DC current gain 1) IC = 2 mA, VCE = 5 V hFE-group A hFE-group B hFE-group C hFE 110 200 420 180 290 520 220 450 800 Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat 200 250 600 mV Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat 700 900 Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 580 660 700 770 1) Pulse test: t ≤=300µs, D = 2%
BC846...BC850
4 Nov-20-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 250 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 8 - Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz h FE-gr.A hFE-gr.B hFE-gr.C h11e 2.7 4.5 8.7 k/G02 Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h12e 1.5 10-4 Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h21e 200 330 600 Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.A hFE-gr.B hFE-gr.C h22e /G03 S Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k/G02 , f = 1 kHz, /G04 f = 200 Hz BC849 BC850 F - 1.2 4 dB Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k/G02 , f = 10 ... 50 Hz BC850 Vn - - 0.135 µV
BC846...BC850
5 Nov-20-2002
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 10 5 10 10 EHP00361 VCB0 CEB0 V EB0V EBC pF CB0C -1 0 1 CCB BC 846...850 Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00362 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt Transition frequency fT = f (IC) VCE = 5V 10 10 10 10 EHP00363 f mA MHz -1 0 1 2 5 T 310 102 110 Ι C
BC846...BC850
6 Nov-20-2002
Collector cutoff current ICBO = f (TA) VCB = 30V 10 0 50 100 150 EHP00415 TA nA Ι CB0 max typ Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 EHP00367 VCEsat mA Ι C V0.3 0.5 100 -50 0.1 0.2 0.4 C C C DC current gain hFE = f (IC) VCE = 5V 10 10 10 10 EHP00365 h mA-2 -1 12 FE 310 102 010 101 010 555 100 -50 Ι C C C C Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 010 EHP00364 BEsatV 0.6 V 1.2 100 101 210 Ι C mA 0.2 0.4 0.8 C25 C100 C -50 C
BC846...BC850
7 Nov-20-2002
h parameter he = f (VCE) normalized IC = 2mA 0 01 02 0 3 0 EHP00369 VCE h e V 1.0 0.5 1.5 2.0 = 2 mA h h h h e e e e CΙ h parameter he = f (IC) normalized VCE = 5V 10 10 10 EHP00368 mA-1 0 1 eh 210 -110 110 10 0 h11e h12e h21e h22e VCE = 5 V Ι C Noise figure F = f (VCE) IC = 0.2mA, RS = 2k/G02 , f = 1kHz 10 10 10 10 BC 846...850 EHP00370 VCE F V dB -1 0 1 2 5 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, RS = 2k/G02 10 10 10 10 BC 846...850 EHP00371 F kHz dB -2 -1 1 2 f 010
BC846...BC850
8 Nov-20-2002
Noise figure F = f (IC) VCE = 5V, f = 1kHz 10 10 10 10 BC 846...850 EHP00373 F mA-3 -2 0 1 -110 = 1 M 100 k 10 k dB 500 1 k ΩΩ ΩSR Ω Ω CΙ Noise figure F = f (IC) VCE = 5V, f = 120Hz 10 10 10 10 BC 846...850 EHP00372 F mA-3 -2 0 1 -110 = 1 M 100 k 10 k dB 500 1 k ΩΩ ΩSR Ω Ω CΙ Noise figure F = f (IC) VCE = 5V, f = 10kHz 10 10 10 10 BC 846...850 EHP00374 F mA-3 -2 0 1 -110 = 1 M 100 k 10 k dB 500 1 k Ω Ω Ω SR Ω Ω CΙ