BC847B-7

BC846A DIODES

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Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage BC846 BC847 BC848 V CBO V Collector-Emitter Voltage BC846 BC847 BC848 VCEO V Emitter-Base Voltage BC846, BC847 BC848 VEBO 6.0 5.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient Air (Note 1) R/c113JA 417 °C/W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C /c183Ideally Suited for Automatic Insertion /c183Complementary PNP Types Available (BC856-BC858) /c183For Switching and AF Amplifier Applications Marking Code (Note 2) Type Marking Type Marking BC846A 1A, K1Q BC847C 1G, K1M BC846B 1B, K1R BC848A 1J, K1J, K1E, K1Q BC847A 1E, K1E, K1Q BC848B 1K, K1K, K1F, K1R BC847B 1F, K1F, K1R BC848C 1L, K1L, K1M /c183Case: SOT-23, Molded Plastic /c183Case material - UL Flammability Rating Classification 94V-0 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Pin Connections: See Diagram /c183Marking Codes (See Table Below & Diagram on Page 3) /c183Ordering & Date Code Information: See Page 3 /c183Approx. Weight: 0.008 grams Mechanical Data A E J L TOP VIEW M B C H G D K C B E Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf 2. Current gain subgroup “C” is not available for BC846. SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.85 0.80 /c97 0/c176 8/c176 All Dimensions in mm

DS11108 Rev. 14 - 2 2 of 3 BC846A-BC848C Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 3) BC846 BC847 BC848 V (BR)CBO V I C = 10/c109A, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) BC846 BC847 BC848 V(BR)CEO V I C = 10mA, IB = 0 Emitter-Base Breakdown Voltage BC846, BC847 (Note 3) BC848 V(BR)EBO 6 5 —— V IE = 1/c109A, IC = 0 H-Parameters Small Signal Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio A Current Gain Group B C h fe hfe hfe hie hie hie hoe hoe hoe hre hre hre 220 330 600 2.7 4.5 8.7 1.5x10 2x10-4 3x10-4 k/c87 k/c87 k/c87 µS µS µS V CE = 5.0V, IC = 2.0mA, f = 1.0kHz DC Current Gain Current Gain Group A B (Note 3) C hFE 110 200 420 180 290 520 220 450 800 — V CE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700 900 —m V IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) 580 660 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current (Note 3) BC846 BC847 BC848 ICES ICES ICES ICBO ICBO 5.0 nA nA nA nA µA V CE = 80V VCE = 50V VCE = 30V VCB = 40V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO —3 . 0 — p F VCB = 10V, f = 1.0MHz Noise Figure NF — 2 10 dB VCE = 5V, IC = 200µA, RS = 2.0k/c87/c44 f = 1.0kHz, /c68f = 200Hz Notes: 3. Short duration pulse test used to minimize self-heating effect.

DS11108 Rev. 14 - 2 3 of 3 BC846A-BC848C Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND Year 1998 1999 2000 2001 2002 2003 2004 Code JK LM N PR Date Code Key XXX = Product Type Marking Code (See Page 1), e.g. K1Q or 1A = BC846A YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September XXX YM Marking Information * xx = device type, e.g. BC846A-7. Device Packaging Shipping BC84xx-7* SOT-23 3000/Tape & Reel Ordering Information (Note 4)