BC846 PHILIPS

Document overview

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Technical content

Product specification Supersedes data of 2002 Feb 04

2004 Feb 06

BC846; BC847; BC848 NPN general purpose transistors

2004 Feb 06 2

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848

FEATURES

  • Low current (max. 100 mA)
  • Low voltage (max. 65 V).

APPLICATIONS

  • General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. MARKING Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. PINNING TYPE NUMBER MARKING CODE (1) BC846 1D* BC846A 1A* BC846B 1B* BC847 1H* BC847A 1E* BC847B 1F* BC847C 1G* BC848B 1K* PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage MAM255Top view Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

BC846 − plastic surface mounted package; 3 leads SOT23 BC846A BC846B BC847 BC847A BC847B BC847C BC848B

2004 Feb 06 3

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC846 − 80 V BC847 − 50 V BC848 − 30 V VCEO collector-emitter voltage open base BC846 − 65 V BC847 − 45 V BC848 − 30 V VEBO emitter-base voltage open collector BC846; BC847 − 6V BC848 − 5V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation T amb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) thermal resistance from junction to ambient in free air; note 1 500 K/W

2004 Feb 06 4

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 CHARACTERISTICS Tamb =2 5°C; unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs;δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current V CB =3 0V ; IE =0 −− 15 nA VCB =3 0V ; IE =0 ; Tj= 150°C −− 5 µA IEBO emitter-base cut-off current V EB =5V ; IC =0 −− 100 nA hFE DC current gain I C =1 0µA; VCE =5V BC846A; BC847A − 90 − BC846B; BC847B; BC848B − 150 − BC847C − 270 − DC current gain I C = 2 mA; VCE =5V BC846 110 − 450 BC847 110 − 800 BC846A; BC847A 110 180 220 BC846B; BC847B; BC848B 200 290 450 BC847C 420 520 800 V CEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA; note 1 − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage I C = 2 mA; VCE = 5 V 580 660 700 mV IC = 10 mA; VCE =5V −− 770 mV C c collector capacitance V CB =1 0V ; IE =Ie =0 ; f = 1 MHz − 2.5 − pF fT transition frequency V CE =5V ; IC =1 0m A ; f = 100 MHz 100 −− MHz F noise figure I C = 200µA; VCE =5V ; R S =2k Ω ; f = 1 kHz; B = 200 Hz − 21 0 d B

2004 Feb 06 5

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage MGT723 10−1 11 0 1 0 2 103 IC (mA) 400 300 200 100 hFE (1) (2) (3) Fig.2 DC current gain as a function of collector current; typical values. BC846A; VCE =5V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage MGT724 10−1 11 0 1 0 2 103 IC (mA) 1200 1000 800 600 400 200 VBE (mV) (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector current; typical values. BC846A; VCE =5V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage103 102 MGT725 10−1 11 0 1 0 2 103 IC (mA) VCEsat (mV) (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. BC846A; IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage MGT726 10−1 11 0 1 0 2 103 IC (mA) 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. BC846A; IC /IB = 10. (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C.

2004 Feb 06 6

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage MGT727 10−1 11 0 1 0 2 103 IC (mA) 600 500 400 300 200 100 hFE (1) (2) (3) Fig.6 DC current gain as a function of collector current; typical values. BC847B; VCE =5V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 1200 1000 800 600 400 200 MGT728 10−2 10−1 11 0 1 0 2 103 IC (mA) VBE (mV) (1) (2) (3) Fig.7 Base-emitter voltage as a function of collector current; typical values. BC847B; VCE =5V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage104 103 102 MGT729 10−1 11 0 1 0 2 103 IC (mA) VCEsat (mV) (1) (2)(3) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. BC847B; IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage MGT730 10−1 11 0 1 0 2 103 IC (mA) 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. BC847B; IC /IB = 10. (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C.

2004 Feb 06 7

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage MGT731 10−1 11 0 1 0 2 103 IC (mA) 1200 1000 800 600 400 200 hFE (1) (2) (3) Fig.10 DC current gain as a function of collector current; typical values. BC847C; VCE =5V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 1200 1000 800 600 400 200 MGT732 10−2 10−1 11 0 1 0 2 103 IC (mA) VBE (mV) (1) (2) (3) Fig.11 Base-emitter voltage as a function of collector current; typical values. BC847C; VCE =5V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage 104 103 102 MGT733 10−1 11 0 1 0 2 103 IC (mA) VCEsat (mV) (1) (2)(3) Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. BC847C; IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage MGT734 10−1 11 0 1 0 2 103 IC (mA) 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. BC847C; IC /IB = 10. (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C.

2004 Feb 06 8

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

2004 Feb 06 9

Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R75/05/pp10 Date of release:2004 Feb 06 Document order number: 9397 750 12395