BC817 SIEMENS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

NPN Silicon AF Transistors BC 817 BC 818 Type Ordering CodeMarking Package 1)Pin Configuration BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 6As 6Bs 6Cs 6Es 6Fs 6Gs SOT-23 B E C 1 2 3 1) For detailed information see chapter Package Outlines.

  • For general AF applications
  • High collector current
  • High current gain
  • Low collector-emitter saturation voltage
  • Complementary types: BC 807, BC 808 (PNP) 07.94

Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Peak collector current ICM A Collector current IC mA Junction temperature Tj ˚C Total power dissipation,TC = 79 ˚CPtot mW Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance Junction - ambient1) Rth JA ≤ 285 K/W 500 330 150 – 65 … + 150 Emitter-base voltage VEB0 Base current IB mA100 45 25 50 30 BC 817 BC 818 Peak base current IBM 200 Junction - soldering point Rth JS ≤ 215 1) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. –DC current gain1) IC = 100 mA;VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 IC = 300 mA;VCE = 1 V BC 817-16, BC 818-16 BC 817-25, BC 818-25 BC 817-40, BC 818-40 h FE 100 160 250 100 170 160 250 350 250 400 630 VCollector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 V (BR)CE0 nA µA Collector cutoff current VCB = 25 V VCB = 25 V,TA = 150 ˚C ICB0 100 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100µA BC 817 BC 818 V (BR)CB0 Emitter-base breakdown voltage,IE = 10µA V(BR)EB0 5–– VCollector-emitter saturation voltage1) IC = 500 mA;IB = 50 mA VCEsat – – 0.7 Base-emitter saturation voltage1) IC = 500 mA;IB = 50 mA VBEsat ––2 nAEmitter cutoff current,VEB = 4 V IEB0 – – 100 MHzTransition frequency IC = 50 mA,VCE = 5 V,f = 20 MHz fT – 170 – AC characteristics pFOutput capacitance VCB = 10 V,f = 1 MHz C obo –6– Input capacitance VEB = 0.5 V,f = 1 MHz C ibo –6 0 – 1) Pulse test:t≤ 300 µs,D ≤ 2% .

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC= f(tp) Transition frequencyfT = f(IC ) VCE = 5 V Collector cutoff currentICB0 = f(TA) VCB0 = 60 V

Base-emitter saturation voltage IC = f(VBEsat) hFE = 10 DC current gainhFE = f(IC ) VCE = 1 V Collector-emitter saturation voltage I C = f(VCEsat) hFE = 10