BC817 INFINEON

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Technical content

BC817, BC818

1 Nov-29-2001

NPN Silicon AF Transistors /G01 For general AF applications /G01 High collector current /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Complementary types: BC807, BC808 (PNP) VPS05161 Type Marking Pin Configuration Package BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 6As 6Bs 6Cs 6Es 6Fs 6Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BC817 BC818 Unit Collector-emitter voltage VCEO 45 25 V Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 DC collector current IC 500 mA Peak collector current ICM 1 A Base current mA100IB Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BC817, BC818

2 Nov-29-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC817 BC818 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 BC817 BC818 V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 25 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 50 µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 hFE 100 160 250 160 250 350 250 400 630 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 hFE 100 170 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VBEsat - - 1.2 1) Pulse test: t ≤ 300µs, D = 2%

BC817, BC818

3 Nov-29-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT - 170 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 6 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 60 -

BC817, BC818

4 Nov-29-2001

Transition frequency fT = f (IC) VCE = 5V EHP00218BC 817/818 03 10mA 110 310 101 102 102 C Tf MHz Ι Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00220BC 817/818 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 totmax totP DC P pt tp =D T tp T Collector cutoff current ICBO = f (TA) VCBO = 25V 010 EHP00221BC 817/818 AT 150 510 ΙCBO nA 50 100 110 210 410 typ max 103

BC817, BC818

5 Nov-29-2001

Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 010 EHP00223BC 817/818 CEsatV 0.4 V 0.8 100 101 310 ΙC mA 210 0.2 0.6 ˚C-50 25 ˚C 150 ˚C Base-emitter saturation voltage IC = f(VBEsat), hFE = 10 010 EHP00222BC 817/818 BEsatV 2.0 V 4.0 100 101 310 ΙC mA 210 1.0 3.0 ˚C-50 25 ˚C ˚C150 DC current gain hFE = f(IC) VCE = 1V EHP00224BC 817/818 -1 3 10mA 010 310 100 101 101 C FEh Ι 210 210 ˚C1005 25 ˚C -50˚C