BC807_07 INFINEON

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 11

Technical content

  • For general AF applications
  • High collector current
  • High current gain
  • Low collector-emitter saturation voltage
  • Complementary type:
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC808-25 BC808-25W BC808-40 BC808-40W 5As 5As 5Bs 5Bs 5Cs 5Cs 5Fs 5Fs 5Gs 5Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 1Pb-containing package may be available upon special request

Parameter Symbol Value Unit Collector-emitter voltage BC807... BC808... VCEO V Collector-base voltage BC807... BC808... VCBO Emitter-base voltage VEBO 5 Collector current IC 500 mA Peak collector current ICM 1000 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 79 °C BC807, BC808 TS ≤ 130 °C BC807W, BC808W Ptot 330 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BC807, BC808 BC807W, BC808W RthJS ≤ 215 ≤ 80 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BC807... IC = 10 mA, IB = 0 , BC808... V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC807... IC = 10 µA, IE = 0 , BC808... V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C ICBO 0.1 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain1) IC = 100 mA, VCE = 1 V, hFE-grp. 16 IC = 100 mA, VCE = 1 V, hFE-grp. 25 IC = 100 mA, VCE = 1 V, hFE grp. 40 IC = 500 mA, VCE = 1 V hFE 100 160 250 160 250 350 250 400 630 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V Base emitter saturation voltage1) IC = 500 mA, IB = 50 mA VBEsat - - 1.2 1Pulse test: t < 300µs; D < 2%

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency I C = 50 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 8 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 60 -

DC current gain hFE = ƒ(IC) VCE = 1 V hFE-grp. 16 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 A IC 1 10 2 10 3 10 hFE 105 °C 85 °C 65 °C 25 °C -40 °C DC current gain hFE = ƒ(IC) VCE = 1 V hFE-grp. 25 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 A IC 1 10 2 10 3 10 hFE 105 °C 85 °C 65 °C 25 °C -40 °C DC current gain hFE = ƒ(IC) VCE = 1 V hFE-grp. 40 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 A IC 1 10 2 10 3 10 hFE 105 °C 85 °C 65 °C 25 °C -40 °C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 010 EHP00215 CEsatV 0.4 V 0.8 100 101 310 ΙC mA 210 0.2 0.6 -50 150 ˚C

Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 010 EHP00214 BEsatV 2.0 V 4.0 100 101 310 ΙC mA 210 1.0 3.0 ˚C-50 25 ˚C 150 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 010 EHP00213 AT 150 510 ΙCBO nA 50 100 110 210 410 typ max 103 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz EHP00210 03 10mA 110 310 101 102 102 C Tf MHz Ι Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 2 4 6 8 10 12 14 16 V 20 VCB/VEB pF CCB/CEB CCB CEB

Total power dissipation Ptot = ƒ(TS) BC807, BC808 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Total power dissipation Ptot = ƒ(TS) BC807W, BC808W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 125 150 175 200 225 250 mW 300 Ptot Permissible Pulse Load P totmax/PtotDC = ƒ(tp) BC807, BC808 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 4 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load RthJS = ƒ(tp) BC807, BC808 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 RthJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005

Ptotmax/PtotDC = ƒ(tp) BC807W, BC808W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BC807W, BC808W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRtthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2

0.25 M BC

1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.05 0.3+0.1 ±0.10.9 A ±0.22 -0.05 0.650.65 M 0.1 0.1 MIN. 0.1 M0.2 A 0.24 2.15 1.1 2.3 Pin 1 Pin 1 2005, June Date code (YM) BCR108W Type code 0.6 0.8 1.6 0.65 0.65 Manufacturer

81726 München, Germany

© Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.