BC635 MICRO-ELECTRONICS
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Technical content
6 BC635 THRU’ BC640
: 2 COMPLEMENTARY ee a . SILICON TRANSISTORS BC635, BC637, BC639 (NPN) and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ~ ; ; * for AF driver stages and amplifier applications up. to 1A. ae ' TO-92 BC635 | iBC637 BC639 ABSOLUTE MAXIMUM RATINGS BC636 BC638 BC640 Collector-Emitter Voltage VCEO 45V--- 60V 80V Collector Current-Continuous Ic 1A Collector Current IC(max) - . 1.54 Total Power Dissipation @ Ty <25°C Ptot 625mb 1e250C pW Operating Junction & Storage Temperature Ty Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) mo PARAMETER SYMBOL |MIN MAX TEST CONDITIONS Collector-Base Breakdown Voltage | BVCBO Vv Ic=1mA_—_sIE=0 j BC635, BC636 45 i BC637, BC638 60 BC639, BC640 80 i Collector-Emitter Breakdown LVCEO Vv Ic=20mA_ Ip=0* ; Voltage BC635, BC636 45 | BC637, BC638 60 . 1 BC639, BC640 80 1 Emitter-Base Breakdwon Voltage BVeBoO 5 v Ig=1pA = Ic=0 Collector Cutoff Current IcBo 100} nA | Vog=30V. Ip=0 i 10] uA | Vog=30V Ta=125°C Collector-Emitter Saturation VCE (sat) 0.5) V I¢=500mA Ig=50mA* J Voltage j Base-Emitter Voltage VBE 1.6] V Ic=500mA Vcp=2V* D.C. Current Gain BC635, BC636 | Hee 40 250 Tc=150mA Vogp=2V* : BC637, BC638 40 160 BC639, BC640 40 160 | ~ All types 25 c¢=500mA Vcp=2V* ; ~ i Current Gain-Bandwidth Product fT 50 MHz| Ic=50mA Veg=5¥-f=20MHz| MICRO ELECTRONICS LID. 244 BR Aa] “Pulse Test:Pulse Width=300us, Duty Cycle=1%. 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex :43510 Micro HX. i P.O. 8049477, Kwun Tong. Tel: 3-430181-6-2-893369;S-092423;3-89829 FAX: 3410321 j
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