BC635 SECOS
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Any changing of specification will not be informed individual BC635 / BC637 / BC639 NPN Type Plastic Encapsulated TransistorElektronische Bauelemente FE ATURE High current transistor MAXIMUM RATINGS (TA=25 C unless otherwise specified) PARAMETERS PARAMETERS SYMBOL TEST CONDITIONS UNIT SYMBOLS VALUES UNIT Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Collector - emitter breakdown voltage Collector - emitter saturation voltage Base - emitter voltage Transition frequency Collector cut-off current Emitter cut-off current DC current gain o o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) o VCEO V(BR)CEO VCE(sat) VBE f T ICBO IEBO hFE(1) hFE(2) hFE(3) BC635 BC637 BC639 BC635 BC637 BC639 BC635 BC635 IC=10mA, IB=0 VCB=30V, IE=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz VEB=5V, IB=0 BC637 BC637-10/BC639-10 BC637-16/BC639-16 BC639 VCBO VEBO IC PC TJ,TSTG V V V V V V TYP 100 MAX 0.1 0.1 0.5 250 160 250 MIN 100 V V MHz V V V V A mA mA W C o 100 0.625 150, -65 ~ 150 01-Jun-2002 Rev. A Page 1 of 2 4.55±0.2 3.5±0.2 4.5±0.214.3±0.2 2.54±0.1 (1.27 Typ.) 0.46+0.1–0.1 0.43+0.08 –0.07 13 2 1: Emitter 3: Base 2: Collector 1.25–0.2 +0.2 TO-92 BC635 40-250 BC637-10, BC639-10 63-160 BC637-16, BC639-16 100-250 RANK RANGE CLASSIFICATION OF h FE(2) RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual Elektronische Bauelemente Typical Characteristics BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor 01-Jun-2002 Rev. A Page 2 of 2