BC635 SEMTECH_ELEC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Dated : 15/03/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Collector Base Voltage BC635 BC637 BC639 V CBO 100 V Collector Emitter Voltage BC635 BC637 BC639 V CEO V Emitter Base Voltage V EBO 5 V Collector Current I C 1 A Peak Collector Current I CM 1.5 A Base Current I B 100 mA Peak Base Current I BM 200 mA Power Dissipation P tot 830 mW Junction Temperature T j 150 OC Storage Temperature Range T S - 55 to + 150 OC 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g
Dated : 15/03/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 150 mA at V CE = 2 V, IC = 500 mA BC635 BC637 / BC639 h FE hFE hFE hFE 250 160 Collector Cutoff Current at VCB = 30 V ICBO - 100 nA Emitter Cutoff Current at VEB = 5 V IEBO - 100 nA Collector Base Breakdown Voltage at IC = 100 µA BC635 BC637 BC639 V (BR)CBO 100 V Collector Emitter Breakdown Voltage at IC = 10 mA BC635 BC637 BC639 V (BR)CEO V Emitter Base Breakdown Voltage at IE = 10 µA V(BR)EBO 5 - V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - 0.5 V Base Emitter Voltage at VCE = 2 V, IC = 500 mA VBE - 1 V Gain Bandwidth Product at VCE = 5 V, IC = 50 mA, f = 100 MHz fT 100 - MHz
Dated : 15/03/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST BC635 / BC637 / BC639 Collector Emitter Voltage V CE (V) IB=0.2 m A 0.4mA 0.6mA 1.6mA Static Characteristics 1.8mA 0.8mA 1.0mA 1.2mA 1.4mA Collector Current I c (mA) C o l l e c t o r C u r r e n t IC ( m A ) Base Emitter Saturation Voltage Collector Emitter Saturation Voltage S a t u r a t i o n V o l t a g e V C E ( s a t ) , V B E ( s a t ) ( V ) DC Current Gain hFE Collector Current IC (mA) DC Current Gain Collector Current Ic (mA) Base Emitter Voltage VBE (V) Base Emitter On Voltage Capacitance C ob (pF) Collector Base Voltage VCB (V) Collector Output Capacitance