BC368 SEMTECH_ELEC

Document overview

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Technical content

Dated : 27/12/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BC368 NPN Silicon Epitaxial Planar Transistor

Applications

  • General purpose switching and amplification
  • Power applications such as audio output stages Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 32 V Collector Emitter Voltage V CEO 20 V Emitter Base Voltage V EBO 5 V Collector Current (DC) I C 1 A Peak Collector Current I CM 2 A Total Power Dissipation Ptot 625 mW Junction Temperature T j 150 OC Storage Temperature Range T S - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 10 V, IC = 5 mA at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 1 A hFE hFE hFE 375 Collector Base Cutoff Current at VCB = 25 V ICBO - 100 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - 100 nA Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 32 - V Collector Emitter Breakdown Voltage a t IC = 10 mA V(BR)CEO 20 - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 5 - V Collector Emitter Saturation Voltage at IC = 1 A, IB = 100 mA VCE(sat) - 0.5 V Base Emitter On Voltage at VCE = 1 V, IC = 1 A VBE(on) - 1 V Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 20 MHz fT 40 - MHz 1. Emitter 2. Collector 3. Base TO-92 Plastic Package

Dated : 27/12/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BC368 100 200 VCE=1V Tj=25 C 200 Collector Current (mA) 20 10050 500 1000 DC Current Gain Current Gain 160 120 40Capacitance (pF) Reverse Voltage ( V ) Capacitance Cobo 5 10 2015 Cobo Cibo Tj=25 C Collector Current (mA) Current Gain - Bandwidth Product Current Gain - Bandwidth Product (M Hz) 10 20 200 100 300 50010050 200 VCE=10V Tj=25 C f=20MHz 1000 12 5 Voltage (v) 0.2 0.4 0.6 0.8 1.0 1000100 Collector current (mA) 20 50 200 500 VBEon@VCE=1V VCEsat @Ic/IB=10 VBEsat@Ic/IB=10 Tj=25 C On Voltages Ic=10mA 0.02 0.01 Collector Voltage (v) 0.2 0.4 0.6 0.8 1.0 Base current (mA) 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Saturation Region 100mA 50mA 1000mA 500mA Tj=25 C 250mA