BC337 SEMTECH

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NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable 48. 38. for AF-driver stages and low-power output stages. eli eT | These types are also available subdivided into three groups iW -16, -25 and -40, according to their DC current gain. As F complementary types, the PNP transistors BC327 and £ | BC328 are recommended. Hi On special request, these transistors can be manufactured os in different pin configurations. Please refer to the “TO-92 c & - 4 : TRANSISTOR PACKAGE OUTLINE” on page 80 for the Co available pin options. B TO-92 Plastic Package Weight approx. 0.18 g Dimensions in mm Absolute Maximum Ratings (T, = 25°C) Collector Emitter Voltage HN/ BC 337 Voes Vv HN / BC 338 Voes Vv Collector Emitter Voltage HN/ BC 337 Veco Vv HN / BC 338 Veco v Fcoarcune —SSSSCSC~C~tCi SYP Storage Temperature Range -65 to + 150 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case GS P FORMA AVAILABLE er SEMTECH ELECTRONICS LTD. GS IN /, (wholly owned subsidiary of HONEY TECHNGLOBY LTD. ) a

$$$ Characteristics at T,,,, =25 °C DC Current Gain. at Vee = 1V, |, = 100 mA Current Gain Group-16 100 160 250 -25 160 250 400 -40 250 400 630 at Vee = 1V, |, = 300 MA Current Gain Group-16 60 130 - -25 100 200 - -40 170 320 : Collector Emitter Cutoff Current at Veg = 45.V HN/BC 337 | Ios 100 nA at Vo. =25V HN/BC 338 | Io. 100 nA at Vee = 45 V, Tay = 125 °C HN/ BC 337 lees 10 pA at Vo. = 25 V, Tr, = 125 °C HN/ BC 338 lees 10 pA Collector Emitter Breakdown Voltage at |, = 10 mA HN/BC 338 | Visaceo v HN/BC 337 | Viniceo v Collector Emitter Breakdown Voltage atl, =0.1 mA HN/ BC 338 Veerces v HN/ BC 337 Veeryces. Vv Emitter Base Breakdown Voltage Verjeso Vv atl, = 0.1 mA Collector Saturation Voltage Voesat 0.7 Vv Base Emitter Voltage Voc Vv at Vee = 1 V, |, = 300 mA Gain Bandwidth Product f at V,, = 5V, |, = 10 mA, f = 5OMHz Collector Base Capacitance Coo at Vig = 10 V, f = MHz ‘) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. @) SEMTECH ELECTRONICS LTD. EY, ( wholly owned subsidiary of HOMEY TECHNGLOBY LTD. ) a

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Collector saturation voltage | DC current gain | versus collector current versus collector current | v HN / BC 337, BC 338 HN / BC 337, BC 338 | °° aia fey [TT] at os = 25 . if) ~L | | | Is 00 — a re | SE oN I onl Tl wee 0.2 * r | {[ [4] ee ———ae . | tot 4 10 10? 10° mA wr 4 10 10° ~— 10° | —+1, | — + | Base saturation voltage Common emitter | versus collector current | collector characteristics | ; HN / BC 337, BC 338 | was HN/ BC 337, BC 338 | typical |} 27 ft lew / | «o Hf oe PIT) IVER RR | | | |e eee Feet i /Zzonee | 0 A - Meare el | Wan Footed _| ww MEL | =a | Yar fe ALT TT Tee 10" 1 10 10? 10°mA 0 1 2v — le ——* Ve ©) SEMTECH ELECTRONICS LTD. He ey, ( wholly owned subsidiary of HOMEY TECHINGLOGY LTD. ) Ld

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