BC337 SIEMENS

Document overview

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Technical content

NPN Silicon AF Transistors BC 337 BC 338 5.91 Type Marking Package 1)Pin Configuration BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 – TO-92 1 2 3 Ordering Code C B E 1) For detailed information see chapter Package Outlines.

  • High current gain
  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary types: BC 327, BC 328 (PNP)

Collector-emitter voltage VCE0 45 V Collector-base voltage VCB0 50 Emitter-base voltage VEB0 Collector current IC mA Base current IB mA Total power dissipation,TC = 66 ˚C Ptot mW Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 K/W Peak collector current ICM A Junction - case1) Rth JC ≤ 135 Peak base current IBM BC 338 800 100 625 150 200 Values 1) Mounted on Al heat sink 15 mm× 25 mm × 0.5 mm.

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. –DC current gain1) IC = 100 mA;VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 IC = 300 mA;VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 h FE 100 160 250 100 170 160 250 350 250 400 630 VCollector-emitter breakdown voltage IC = 10 mA BC 337 BC 338 V (BR)CE0 nA nA µA µA Collector cutoff current VCB = 25 V BC 338 VCB = 45 V BC 337 VCB = 25 V,TA = 150 ˚C BC 338 VCB = 45 V,TA = 150 ˚C BC 337 ICB0 100 100 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100µA BC 337 BC 338 V (BR)CB0 Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– VCollector-emitter saturation voltage1) IC = 500 mA;IB = 50 mA VCEsat – – 0.7 Base-emitter saturation voltage IC = 500 mA;IB = 50 mA VBEsat ––2 nAEmitter cutoff current VEB = 4 V IEB0 – – 100 1) Pulse test:t≤ 300 µs,D ≤ 2% .

atTA = 25 ˚C, unless otherwise specified. MHzTransition frequency IC = 50 mA,VCE = 5 V,f = 20 MHz fT – 170 – UnitValuesParameter Symbol min. typ. max. AC characteristics pFOutput capacitance VCB = 10 V,f = 1 MHz C obo –8– Input capacitance VEB = 0.5 V,f = 1 MHz C ibo –6 0 –

Total power dissipationPtot= f(TA;TC ) Collector currentIC =f (VBE ) VCE = 1 V Permissible pulse loadRthJA = f(tp) Collector cutoff currentICB0 = f(TA) VCB = 45 V

Transition frequencyfT = f(IC ) f = 20 MHz,TA = 25 ˚C Base-emitter saturation voltage VBEsat = f(IC ) hFE = 10 DC current gainhFE = f(IC ) VCE = 1 V Collector-emitter saturation voltage VCEsat = f(IC ) hFE = 10