BC328

BC327 SEMTECH_ELEC

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Dated : 27/12/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BC327…BC328 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC327 BC328 Unit Collector Base Voltage -V CBO 50 30 V Collector Emitter Voltage -V CEO 45 25 V Emitter Base Voltage -V EBO 5 V Collector Current -I C 800 mA Peak Collector Current -I CM 1 A Total Power Dissipation Ptot 625 mW Junction Temperature T j 150 OC Storage Temperature Range T S - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group at -VCE = 1 V, -IC = 300 mA -16 -25 -40 -16 -25 -40 h FE hFE hFE hFE hFE hFE 100 160 250 100 170 250 400 630 Collector Base Cutoff Current at -VCB = 45 V at -VCB = 25 V BC327 BC328 -ICBO 100 100 nA Collector Base Breakdown Voltage at -IC = 100 µA BC327 BC328 -V(BR)CBO - V Collector Emitter Breakdown Voltage at -IC = 10 mA BC327 BC328 -V(BR)CEO - V Emitter Base Breakdown Voltage at -IE = 100 µA -V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA -VCE(sat) - - 0.7 V Base Emitter On Voltage at -VCE = 1 V, -IC = 300 mA -VBE(on) - - 1.2 V Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 50 MHz fT - 100 - MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz CCBO - 12 - pF 1. Collector 2. Base 3. Emitter TO-92 Plastic Package

Dated : 27/12/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BC327…BC328