BC237 SEMTECH_ELEC

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Dated : 27/12/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol BC237 BC238 BC239 Unit Collector Base Voltage V CBO 50 30 30 V Collector Emitter Voltage V CEO 45 25 25 V Emitter Base Voltage V EBO 6 5 V Collector Current I C 100 mA Total Power Dissipation Ptot 500 mW Junction Temperature T j 150 OC Storage Temperature Range T S - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 5 V, IC = 2 m A C u r r e n t G a i n G r o u pA B C hFE hFE hFE 120 180 380 220 460 800 Collector Base Cutoff Current at VCB = 50 V at VCB = 30 V BC237 BC238, BC239 ICBO nA Collector Emitter Breakdown Voltage at IC = 2 mA BC237 BC238, BC239 V(BR)CEO 45 - V Emitter Base Breakdown Voltage at IE = 100 µA BC237 BC238, BC239 V(BR)EBO 6 - V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VCE(sat) 0.2 0.6 V Base Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VBE(sat) 0.83 1.05 V Base Emitter On Voltage at VCE = 5 V, IC = 2 mA VBE(on) 0.55 0.7 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 150 - MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Cob - 4.5 pF 1. Collector 2. Base 3. Emitter TO-92 Plastic Package

Dated : 27/12/2007 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BC237...BC239