BAX12 PHILIPS

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Technical content

Product specification Supersedes data of April 1996

1996 Sep 17

Controlled avalanche diode M3D176

1996 Sep 17 2

Philips Semiconductors Product specification Controlled avalanche diode BAX12

FEATURES

  • Hermetically sealed leaded glass SOD27 (DO-35) package
  • Switching speed: max. 50 ns
  • General application
  • Continuous reverse voltage: max. 90 V
  • Repetitive peak reverse voltage: max. 90 V
  • Repetitive peak forward current: max. 800 mA
  • Repetitive peak reverse current: max. 600 mA
  • Capable of absorbing transients repetitively.

APPLICATIONS

  • Switching of inductive loads in semi-electronic telephone exchanges.

DESCRIPTION

The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. Fig.1 Simplified outline (SOD27; DO35) and symbol. Marking code: BAX12. handbook, halfpage MAM246 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating. 2. Device mounted on an FR4 printed circuit-board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage note 1 − 90 V VR continuous reverse voltage note 1 − 90 V IF continuous forward current see Fig.2; note 2 − 400 mA IFRM repetitive peak forward current − 800 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 55 A t = 100µs − 15 A t = 10 ms − 9A Ptot total power dissipation T amb =2 5°C; note 2 − 450 mW IRRM repetitive peak reverse current − 600 mA ERRM repetitive peak reverse energy tp ≥ 50 µs; f≤ 20 Hz; Tj=2 5°C − 5.0 mJ Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C

1996 Sep 17 3

Philips Semiconductors Product specification Controlled avalanche diode BAX12

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF =1 0m A − 750 mV IF =5 0m A − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1.0 V IF = 400 mA − 1.25 V IR reverse current see Fig.5 VR =9 0V − 100 nA VR = 90 V; Tj= 150°C − 100 µA V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V C d diode capacitance f = 1 MHz; VR =0 ; see Fig.6 − 35 pF trr reverse recovery time when switched from IF = 30 mA to IR =3 0m A ; R L = 100Ω ; measured at IR = 3 mA; see Fig.10 − 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W R th j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W

1996 Sep 17 4

Philips Semiconductors Product specification Controlled avalanche diode BAX12 GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 200 400 500 300 200 100 MBG455 Tamb (oC) IF (mA) Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 012 600 200 400 MBG463 VF (V) IF (mA) (1) (2) (3) (1) Tj= 175°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG702 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

1996 Sep 17 5

Philips Semiconductors Product specification Controlled avalanche diode BAX12 Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth 0 100 20010 102 104 103 105 106

107 MBG696

(nA) Tj (oC) VR =9 0V . Solid line; maximum values. Dotted line; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 VR (V) C d (pF) MGD003 Fig.7 Maximum permissible repetitive peak reverse power as a function of the pulse duration T≥ 50 ms; T j=2 5°C. Solid line; rectangular waveform;δ≤ 0.01. Dotted line; triangular waveform;δ≤ 0.02. (1) Limited by IRMM = 600 mA. handbook, half age MBG701 10−1 11 0 102 103 10−2 PRRM (W) t (ms) (1)

1996 Sep 17 6

Philips Semiconductors Product specification Controlled avalanche diode BAX12 Fig.8 Reverse current as a function of continuous reverse voltage. handbook, halfpage 100 200 600 200 400 MBG698 150 (1) (4) IR (mA) VR (V) (2) (3) Reverse voltages higher than the VR ratings are allowed, provided: a. The transient energy≤ 7.5 mJ at PRRM ≤30 W; Tj=2 5°C; the transient energy≤ 5 mJ at PRRM = 120 W; Tj=2 5°C (see Fig.7). b. T≥ 50 ms;δ≤ 0.01 (rectangular waveform) (see Fig.9). δ≤ 0.02 (triangular waveform) (see Fig.9). With increasing temperature, the maximum permissible transient energy must be decreased by 0.03 mJ/K. (1) Tj=2 5°C; minimum values. (2) Tj= 175°C; minimum values. (3) Tj=2 5°C; maximum values. (4) Tj= 175°C; maximum values. Fig.9 Peak reverse voltage and current test pulses. handbook, halfpage MBG699 VR IR T time timet (rectangular waveform) t (triangular waveform) δ = t T

1996 Sep 17 7

Philips Semiconductors Product specification Controlled avalanche diode BAX12 Fig.10 Reverse recovery voltage test circuit and waveforms. Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factorδ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance: C≤ 1 pF (oscilloscope input capacitance + parasitic capacitance). (1) IR = 3 mA. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881

1996 Sep 17 8

Philips Semiconductors Product specification Controlled avalanche diode BAX12 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.11 SOD27 (DO-35). Dimensions in mm. andbook, full pagewidth MLA428 - 125.4 min4.25 max 1.85 max 25.4 min 0.56 max