BAW101S PHILIPS

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Technical content

Product specification 2003 May 13 DISCRETE SEMICONDUCTORS BAW101S High voltage double diode book, halfpage MBD128

2003 May 13 2

Philips Semiconductors Product specification High voltage double diode BAW101S

FEATURES

  • Small plastic SMD package
  • High switching speed: max. 50 ns
  • High continuous reverse voltage: 300 V
  • Electrically insulated diodes.

APPLICATIONS

  • High voltage switching
  • Automotive
  • Communication.

DESCRIPTION

The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. MARKING Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. PINNING TYPE NUMBER MARKING CODE (1) BAW101S K2 ∗ PIN DESCRIPTION 1 anode 1 2 n.c. 3 cathode 2 4 anode 2 5 n.c. 6 cathode 1 handbook, halfpage MBL892Top view 13 2 456 13 2 6 45 Fig.1 Simplified outline (SOT363) and symbol.

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Philips Semiconductors Product specification High voltage double diode BAW101S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. Note 1. Pulse test: pulse width = 300µs;δ = 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 300 V series connection − 600 V VRRM repetitive peak reverse voltage − 300 V series connection − 600 V IF continuous forward current single diode loaded; note 1; see Fig.2− 250 mA double diode loaded; note 1; see Fig.2− 140 mA IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; t=1 µs − 4.5 A Ptot total power dissipation T amb =2 5°C; note 1 − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VBR(R) reverse breakdown voltage IR = 100µA 300 − V VF forward voltage I F = 100 mA; note 1 − 1.1 V IR reverse current V R = 250 V − 150 nA VR = 250 V; Tamb = 150°C − 50 µA trr reverse recovery time when switched from IF =3 0m At oIR =3 0m A ; R L = 100Ω ; measured at IR =3m A − 50 ns C d diode capacitance V R = 0 V; f = 1 MHz − 2p F

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Philips Semiconductors Product specification High voltage double diode BAW101S THERMAL CHARACTERISTICS Notes 1. One or more diodes loaded. 2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 255 K/W R th j-a thermal resistance from junction to ambient note 2 357 K/W GRAPHICAL DATA handbook, halfpage (1) (2) 50 100 Tamb (°C) IF (mA) 200 300 100 200 150 MLE057 Device mounted on an FR4 printed-circuit board. Cathode-lead mounting pad = 1 cm2. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. (1) Single diode loaded. (2) Double diode loaded. handbook, halfpage 600 IF (mA) 200 400 MBG384

1 VF (V)

(1) (3)(2) (1) Tj= 150°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.3 Forward current as a function of forward voltage.

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Philips Semiconductors Product specification High voltage double diode BAW101S handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, halfpage 200100500 150 102 10-1 10-2 MLE058 (1) (2) Tj (°C) IR (mA) Fig.5 Reverse current as a function of junction temperature. (1) VR =V RMAX : maximum values. (2) VR =V RMAX : typical values. handbook, halfpage 02 1 0 0.6 0.5 0.3 0.2 0.4 VR (V) C d (pF) MLE059 Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C.

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Philips Semiconductors Product specification High voltage double diode BAW101S handbook, halfpage 05 0 Tamb (°C) VR (V) 100 200 400 300 100 200 150 MLE060 Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature.

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Philips Semiconductors Product specification High voltage double diode BAW101S PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT363 SC-88 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28

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Philips Semiconductors Product specification High voltage double diode BAW101S DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

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Philips Semiconductors Product specification High voltage double diode BAW101S NOTES

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Philips Semiconductors Product specification High voltage double diode BAW101S NOTES