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Page:P2-P1 MAKO Semiconductor Co., Limited SCHOTTKY DIODES
FEATURES
For General Purpose Switching Applications High Conductance MARKING: MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Limit s Unit Reverse voltage V R V Forward Current I F 200 mA Peak Forward Surge Current IFM(surge) 500 mA Power Dissipation P D 225 mW Thermal Resistance Junction to Ambient Air R θJ A 556 Junction temperature T J 150 Storage temperature range TST G -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage V R 70 V IR =100μA Forward voltage V F1 0.715 V IF=1mA V F2 0.855 V IF=10mA V F3 1 V IF=50mA V F4 1.25 V IF=150mA Reverse current IR 2.5 μA V R =70V Capacitance between terminals C T 1.5 pF V R =0,f=1MHz Reverse recovery time trr 6 ns IF = IR = 10mA, Irr= 0.1 x IR , RL = 100Ω BAW56:A1 BAV70:A4 BAV99:A7 Plastic- Encapsulate Diodes SOT-23 BAW56/BAV70/BAV99 MAKO Semiconductor Co., Limited http://www.makosemi.hk/
Page:P2-P2 MAKO Semiconductor Co., Limited Typical Characteristics Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 MAKO Semiconductor Co., Limited http://www.makosemi.hk/