BAV10 PHILIPS

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Technical content

Product specification Supersedes data of April 1996

1996 Sep 16

1996 Sep 16 2

Philips Semiconductors Product specification High-speed diode BAV10

FEATURES

  • Hermetically sealed leaded glass SOD27 (DO-35) package
  • High switching speed: max. 6 ns
  • General application
  • Continuous reverse voltage: max. 60 V
  • Repetitive peak reverse voltage: max. 60 V
  • Repetitive peak forward current: max. 600 mA.

APPLICATIONS

  • High-speed switching.

DESCRIPTION

The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. Fig.1 Simplified outline (SOD27; DO-35) and symbol. handbook, halfpage MAM246 k a The diode is type branded. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 60 V VR continuous reverse voltage − 60 V IF continuous forward current see Fig.2; note 1 − 300 mA IFRM repetitive peak forward current − 600 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 9A t = 100µs − 3A t=1s − 1A Ptot total power dissipation T amb =2 5°C; note 1 − 350 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C

1996 Sep 16 3

Philips Semiconductors Product specification High-speed diode BAV10

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF =1 0m A − 750 mV IF = 200 mA − 1.0 V IF = 500 mA − 1.25 V IF = 200 mA; Tj= 100°C − 950 mV IR reverse current see Fig.5 VR =6 0V − 100 nA VR =6 0V ; Tj= 150°C − 100 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from I F = 400 mA to IR = 400 mA; RL = 100Ω ; measured at IR = 40 mA; see Fig.7 − 6n s Vfr forward recovery voltage when switched from I F = 400 mA; tr = 30 ns; see Fig.8 − 2V when switched from IF = 400 mA; tr = 10 ns; see Fig.8 − 1.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W R th j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W

1996 Sep 16 4

Philips Semiconductors Product specification High-speed diode BAV10 GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 200 400 300 200 100 MBG454 Tamb (oC) IF (mA) Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 012 600 200 400 MBG457 VF (V) IF (mA) (1) (2) (3) (1) Tj= 175°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

1996 Sep 16 5

Philips Semiconductors Product specification High-speed diode BAV10 Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 0 100 Tj (oC) 200 103 102 10−1 10−2 IR (µA) MGD011 (1) (2) (3) (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. (3) VR = 30 V; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 VR (V) C d (pF) MGD002

1996 Sep 16 6

Philips Semiconductors Product specification High-speed diode BAV10 Fig.7 Reverse recovery voltage test circuit and waveforms. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 (1) IR =4 0m A . Fig.8 Forward recovery voltage test circuit and waveforms. Input signal: forward pulse duration tp = 300 ns; duty factorδ = 0.01. tr t tp 10% 90% I input signal R = 50S Ω I R = 50i Ω OSCILLOSCOPE Ω1 k Ω450 D.U.T. MGA882 V fr t output signal V

1996 Sep 16 7

Philips Semiconductors Product specification High-speed diode BAV10 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.9 SOD27 (DO-35). Dimensions in mm. handbook, full pagewidth MLA428 - 125.4 min4.25 max 1.85 max 25.4 min 0.56 max