BAT42W_V01 VISHAY

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BAT42W, BAT43W www.vishay.com Vishay Semiconductors Rev. 1.9, 23-Feb-18 1 Document Number: 85661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode DESIGN SUPPORT TOOLS MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

  • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
  • For general purpose applications
  • AEC-Q101 qualified available
  • Base P/N-E3 - RoHS-compliant, commercial grade
  • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Valid provided that electrodes are kept at ambient temperature click logo to get started Available Models PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT42W BAT42W-E3-08 or BAT42W-E3-18 Single L2 Tape and reelBAT42W-HE3-08 or BAT42W-HE3-18 BAT43W BAT43W-E3-08 or BAT43W-E3-18 Single L3BAT43W-HE3-08 or BAT43W-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V RRM 30 V Forward continuous current (1) IF 200 mA Repetitive peak forward current (1) tp < 1 s,  < 0.5 I FRM 500 mA Surge forward current (1) tp < 10 ms I FSM 4A Power dissipation (1) Tamb = 65 °C P tot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 300 K/W Junction temperature T j 125 °C Operating temperature range T op -55 to +125 °C Storage temperature range T stg -55 to +150 °C

BAT42W, BAT43W www.vishay.com Vishay Semiconductors Rev. 1.9, 23-Feb-18 2 Document Number: 85661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test; tp  300 μs, tp/T < 0.02 TYPICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified) Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 2 - Typical Forward Characteristics Fig. 3 - Typical Reverse Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I R = 100 μA (pulsed) V (BR) 30 V Leakage current (1) VR = 25 V I R 0.5 μA VR = 25 V, Tj = 100 °C I R 100 μA Forward voltage (1) IF = 200 mA V F 1000 mV IF = 10 mA BAT42W V F 400 mV IF = 50 mA BAT42W V F 650 mV IF = 2 mA BAT43W V F 260 330 mV IF = 15 mA BAT43W V F 450 mV Diode capacitance V R = 1 V, f = 1 MHz C D 7p F Reverse recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100  trr 5n s 200

18442 Tamb - Ambient Temperature (°C)

Ptot - Power Dissipation (mW) 18443 120010008006004002000 I- F o rward Current (mA)F 1000 100 0.1 0.01 VF - Instantaneous Forward Voltage (mV) 25 °C 125 °C - 40 °C 1000 100 0.1 0.01 18444 0 1 02 03 04 05 0 VR - Reverse Voltage (V) 125 °C 100 °C 75 °C 50 °C 25 °C I - Re verse Leackage Current (µA)R 18445 01 02 0 3 0 VR - Reverse Voltage (V) C - Diode Capacitance (pF)D 51 5 2 5

BAT42W, BAT43W www.vishay.com Vishay Semiconductors Rev. 1.9, 23-Feb-18 3 Document Number: 85661 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.1 (0.004) max. 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) Mounting Pad Layout 2.5 (0.098) 0.85 (0.033) Cathode bar 0.65 (0.026) 0.45 (0.018) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.008) 0° to 8° 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432

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