Small signal Schottky diodes

Document overview

  • Manufacturer or author: STMICROELECTRONICS
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Technical content

SMALL SIGNAL SCHOTTKY DIODES October 2001 - Ed: 1C DO-35 Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 30 V IF Forward Continuous Current T a = 25°C 200 mA IFRM Repetitive Peak Fordware Current t p ≤ 1s δ ≤0.5 500 mA IFSM Surge non Repetitive Forward Current* tp = 10ms 4 A Ptot Power Dissipation* T l= 65 °C 200 mW Tstg Tj Storage and Junction Temperature Range - 65 to +150 - 65 to +125 TL Maximum Temperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 300 °C/W THERMAL RESISTANCE * On infinite heatsink with 4mm lead length General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic dis-

DESCRIPTION

  • Pulse test: tp ≤ 300µs δ< 2% . Symbol Test Conditions Min. Typ. Max. Unit VBR Tj = 25°C IR = 100µA 30 V VF* Tj= 25°C IF = 200mA All Types 1 V Tj= 25°C IF = 10mA BAT 42 0.4 Tj= 25°C IF = 50mA 0.65 Tj= 25°C IF = 2mA BAT 43 0.26 0.33 Tj= 25°C IF = 15mA 0.45 IR * Tj= 25°C VR = 25V 0.5 µA Tj= 100°ÉC 100 STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit CT j= 25°C VR = 1V f = 1MHz 7 pF trr Tj = 25°CI F = 10mA I R = 10mA i rr= 1mA R L = 100Ω 5n s h Tj= 25°C RL = 15KΩ C L = 300pF f = 45MHz Vi= 2V 80 % DYNAMIC CHARACTERISTICS Fig. 1:Forward current versus forward voltage at different temperatures (typical values). Fig. 2:Forward current versus forward voltage (typical values).

3/4® BAT42 / BAT43 Fig. 3:Reverse current versus junction tempera- ture (typical values). Fig. 4:Reverse current versus continuous re- verse voltage. Fig. 5:Capacitance C versus reverse applied voltage VR (typical values).

Cooling method: by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g PACKAGE MECHANICAL DATA DO-35 CA BO/ O/DO/D C REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 28.00 1.102 D 0.458 0.558 0.018 0.022 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com