BAT41_V01 VISHAY

Document overview

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Technical content

www.vishay.com Vishay Semiconductors Rev. 1.9, 16-Nov-2021 1 Document Number: 85659 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode LINKS TO ADDITIONAL RESOURCES

FEATURES

  • For general purpose applications
  • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
  • This diode is also available in a MiniMELF case with type designation LL41
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box Note (1) Valid provided that electrodes are kept at ambient temperature Note (1) Pulse test, tp = 300 μs 333DDD3 D 3D Models PARTS TABLE PART ORDERING CODE CIRCUIT CONF IGURATION TYPE MARKING REMARKS BAT41 BAT41-TR or BAT41-TAP Single BAT41 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V RRM 100 V Forward continuous current (1) IF 100 mA Repetitive peak forward current (1) tp < 1 s, δ < 0.5 I FRM 350 mA Surge forward current (1) tp = 10 ms I FSM 750 mA Power dissipation (1) Tamb = 65 °C P tot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air Valid provided that electrodes are kept at ambient temperature R thJA 300 K/W Junction temperature T j 125 °C Ambient operating temperature range T amb -65 to +125 °C Storage temperature range T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage (1) IR = 100 μA V (BR) 100 110 V Leakage current (1) VR = 50 V, Tj = 25 °C I R 100 nA VR = 50 V, Tj = 100 °C I R 20 μA Forward voltage (1) IF = 1 mA V F 400 450 mV IF = 200 mA V F 1000 mV Diode capacitance V R = 1 V, f = 1 MHz C D 2p F

www.vishay.com Vishay Semiconductors Rev. 1.9, 16-Nov-2021 2 Document Number: 85659 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 2 - Typical Reverse Characteristics Fig. 3 - Typical Forward Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)

20225 Tamb - Ambient Temperature (°C)

P- P ower Dissipation (mW)tot 100 150 200 250 0 50 100 150 100000 10000 1000 100

20226 V R - Reverse Voltage (V)

I - Re verse Leakage Current (nA)R 0 1 02 03 04 05 06 07 08 09 0 1 0 0 25 °C T = 125 °C 100 °C 75 °C 50 °C j 0.01 0.1 100 1000 0 400 600 800 1000 1200200 I- Forward Current (mA) F V F - Forward Voltage (mV) 18641 T j = 125 ° C °C 25 - 40 °C 20227 10 20 30 400 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 C - Diode Capacitance (pF)D VR - Reverse Voltage (V) 1.0 0.5 15 25 355 94 9366 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) Cathode Identification 1.7 [0.067] Ø 0.6 max. [0.024] Ø 0.4 min. [0.015]

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