BAS716 PHILIPS
Document overview
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Technical content
Product specification 2003 Nov 07 DISCRETE SEMICONDUCTORS BAS716 Low-leakage diode M3D319
2003 Nov 07 2
Philips Semiconductors Product specification Low-leakage diode BAS716
FEATURES
- Plastic SMD package
- Low leakage current: typ. 0.2 nA
- Switching time: typ. 0.6µs
- Continuous reverse voltage: max. 75 V
- Repetitive peak reverse voltage: max. 85 V
- Repetitive peak forward current: max. 500 mA. APPLICATION
- Low leakage current applications in surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage12 /#01/#03 Top view MAM408 Fig.1 Simplified outline (SOD523; SC-79) and symbol. Marking code: S1. The marking bar indicates the cathode.
ORDERING INFORMATION
In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a FR4 printed-circuit board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS716 − plastic surface mounted package; 2 leads SOD523 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 tp =1 µs − 4A tp =1m s − 1A tp =1s − 0.5 A Ptot total power dissipation T amb =2 5°C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C
2003 Nov 07 3
Philips Semiconductors Product specification Low-leakage diode BAS716
ELECTRICAL CHARACTERISTICS
Tj= 2 5°C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions. 2. Soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V F forward voltage I F = 1 mA 0.77 0.9 V IF = 10 mA 0.85 1 V IF = 50 mA 0.92 1.1 V IF = 150 mA 1.02 1.25 V IR reverse current V R = 75 V 0.2 5 nA VR = 75 V; Tj= 150°C 3 80 nA VR = 100 V 0.3 − nA C d diode capacitance V R = 0 V; f = 1 MHz; see Fig.6 2 − pF trr reverse recovery time when switched from I F = 10 mA to IR = 10 mA; RL = 100 Ω ; measured at IR =1m A 0.6 3 µs SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 450 K/W R th j-s thermal resistance from junction to soldering point note 2 120 K/W
2003 Nov 07 4
Philips Semiconductors Product specification Low-leakage diode BAS716 GRAPHICAL DATA handbook, halfpage IF (mA) 100 200 300 100 200 Tamb (°C) MHC323 Device mounted on a FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 1.6 300 100 200 MLB752 - 1 0.8 1.20.4 IF (mA) V (V)F (1) (2) (3) Fig.3 Forward current as a function of forward voltage. (1) Tj= 150°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. handbook, full pagewidth MBG704 10 tp (µs)1 IFSM (A) 102 10−1 104102 103 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents; Tj=2 5°C prior to surge.
2003 Nov 07 5
Philips Semiconductors Product specification Low-leakage diode BAS716 handbook, halfpage 2000 50 100 150 102 10-1 MDB826 IR (nA) Tj (°C) (1) (2) Fig.5 Reverse current as a function of junction temperature. VR =7 5V . (1) Maximum values. (2) Typical values. handbook, halfpage 0 5 10 20 2.0 1.5 0.5 1.0 MDB827 C d (pF) VR (V) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.7 Reverse recovery voltage test circuit and waveforms. (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factorδ = 0.05; Oscilloscope: rise time tr = 0.35 ns.
2003 Nov 07 6
Philips Semiconductors Product specification Low-leakage diode BAS716 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOD523 SC-79 98-11-25 02-12-13 Plastic surface mounted package; 2 leads SOD523 0 0.5 1 mm scale D H E E bp A c v M A A UNIT b p cD E v mm AH E DIMENSIONS (mm are the original dimensions) Note 1. The marking bar indicates the cathode. (1) 0.34 0.26 0.17 0.11 0.10.85 0.75 1.25 1.15 0.65 0.58 1.65 1.55
2003 Nov 07 7
Philips Semiconductors Product specification Low-leakage diode BAS716 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R76/01/pp8 Date of release:2003 Nov 07 Document order number: 9397 750 11999