BAL99_V01 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
www.vishay.com Vishay Semiconductors Rev. 2.1, 13-Feb-18 1 Document Number: 85535 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
- Fast switching speed
- Surface mount package
- Well suited for automated assembly process
- AEC-Q101 qualified available
- Base P/N-E3 - RoHS-compliant, commercial grade
- Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 Available Models PARTS TABLE PART ORDERING CODE CIRCUIT CO NFIGURATION TYPE MARKING REMARKS BAL99 BAL99-E3-08 or BAL99-E3-18 Single JF Tape and reelBAL99-HE3-08 or BAL99-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage = DC blocking voltage V RRM = VRWM = VR 70 V Peak forward surge current tp = 1 μs I FSM 2A tp = 1 ms I FSM 1A tp = 1 s I FSM 0.5 A Average forward current I FAV 250 mA Power dissipation On fiberglass substrate 30 mm x 10 mm x 1.6 mm Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air On fiberglass substrate 30 mm x 10 mm x 1.6 mm R thJA 357 K/W Junction temperature T j 150 °C Storage temperature range T stg -55 to +150 °C Operating temperature range T op -55 to +150 °C
www.vishay.com Vishay Semiconductors Rev. 2.1, 13-Feb-18 2 Document Number: 85535 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 1 mA V F 0.715 V IF = 10 mA V F 0.855 V IF = 50 mA V F 1V IF = 150 mA V F 1.25 V Reverse current VR = 70 V I R 2500 nA VR = 70 V, Tj = 150 °C I R 100 μA VR = 25 V, Tj = 150 °C I R 30 μA Diode capacitance V F = VR = 0, f = 1 MHz C D 1.5 pF Reverse recovery time I F = IR = 10 mA, iR = 1 mA t rr 6n s Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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