Download PDFUTC2SB772 UTC
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Technical content
UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-002,A MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
FEATURES
*High current output up to 3A *Low saturation voltage *Complement to 2SD882 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -30 V Emitter-Base Voltage V EBO -5 V Collector Dissipation( Tc=25°C) Pc 10 W Collector Dissipation( Ta=25°C) Pc 1 W Collector Current(DC) Ic -3 A Collector Current(PULSE) Ic -7 A Base Current I B -0.6 A Junction Temperature T j 150 °C Storage Temperature T STG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current I CBO V CB=-30V,IE=0 -1000 nA Emitter Cut-Off Current I EBO V EB=-3V,Ic=0 -1000 nA DC Current Gain(note 1) h FE1 hFE2 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A 100 200 150 400 Collector-Emitter Saturation Voltage V CE(sat) Ic=-2A,I B=-0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage V BE(sat) Ic=-2A,I B=-0.2A -1.0 -2.0 V Current Gain Bandwidth Product f T V CE=-5V,Ic=-0.1A 80 MHz Output Capacitance Cob V CB=-10V,IE=0,f=1MHz 45 pF Note 1:Pulse test:PW<300µs,Duty Cycle<2%
UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-002,A CLASSIFICATION OF hFE2 RANK Q P E RANGE 100-200 160-320 200-400 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics -Collector-Emitter voltage(V) -Ic,Collector current(A) 04 8 1 21 6 2 0 0.4 0.8 1.2 1.6 Tc,Case Temperature(°C) -IB=1mA -IB=2mA -IB=3mA -IB=4mA -IB=5mA -IB=6mA -IB=7mA -IB=8MA -IB=9mA Fig.2 Derating curve of safe operating areas - Ic Derating(%) 200150100500-50 100 150 S/b limited Dissipation limited Tc,Case Temperature(°C) 200150100500-50 Fig.3 Power Derating Power Dissipation(W) Fig.4 Collector Output capacitance -Collector-Base Voltage(v) Output Capacitance(pF) 100 10-1 10-2 10-3 101 102 103 100 IE=0 f=1MHz Fig.5 Current gain- bandwidth product FT(MHz), Current gain- bandwidth product 101 102 103 100 VCE=5V Collector-Emitter Voltage -Ic,Collector current(A) Fig.6 Safe operating area Ic(max),DC Ic(max),Pulse 10mS 1mS 0.1mS Ic,Collector current(A) Fig.7 DC current gain -Ic,Collector current(mA) -Ic,Collector current(mA) Fig.8 Saturation Voltage DC current Gain,HFE 101 102 103 100 -Saturation Voltage(mV) VCE=-2V VCE(sat) VBE(sat) 10-2 10-1 100 101 10-2 10-1 100 101 100 101 102 100 101 102 103 104 100 101 102 103 104 100 101 102 103 104 IB=8mAIB=8mA