B5819WS JIANGSU
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
2.70 3.70 0.55 1.05 1.6 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B 5 8 1 9 W S SCHOTTKY BARRIER DIODE
FEATURES
P D: 200 mW (Tamb=25 ℃) Collector current I F: 1 A Collector-base voltage V R: 4 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ MARKING: SL ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) I R= 1mA 40 V Reverse voltage leakage current IR VR=40V VR=4V VR=6V 0.05 0.075 mA Forward voltage VF IF=0.1A IF=1A IF=3A 0.45 0.6 0.9 V Diode capacitance CD V R=4V, f=1MHz 120 pF SOD-323