B5818WS JIANGSU
Document overview
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Technical content
2.70 3.70 0.55 1.05 1.6 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B 5 8 1 8 W S SCHOTTKY BARRIER DIODE
FEATURES
P D: 200 mW (Tamb=25 ℃) Collector current I F: 1 A Collector-base voltage V R: 3 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ MARKING: SK ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) I R= 1mA 30 V Reverse voltage leakage current IR V R=30V 1 mA Forward voltage VF IF=1A IF=3A 0.55 0.875 V Diode capacitance CD V R=4V, f=1MHz 120 pF SOD-323