B350B_V01 VISHAY

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Technical content

B350B, B360B www.vishay.com Vishay General Semiconductor Revision: 08-Mar-2021 1 Document Number: 89122 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface-Mount Schottky Rectifier LINKS TO ADDITIONAL RESOURCES

FEATURES

  • Low profile package
  • Ideal for automated placement
  • Guardring for overvoltage protection
  • Low power losses, high efficiency
  • Low forward voltage drop
  • High surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converte rs, and polarity protection applications. MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V, 60 V IFSM 60 A VF at IF = 3.0 A 0.51 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configurations Single SMB (DO-214AA) Cathode Anode 333DDD3 D 3D Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B350B B360B UNIT Device marking code B35 B36 Maximum repetitive peak reverse voltage V RRM 50 60 V Maximum average forward rectified current at TL (fig. 1) I F(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A Operating junction and storage temperature range T J, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage I Maximum reverse current Rated V R TJ = 25 °C IR (2) - 100 μA TJ = 125 °C 3 10 mA

B350B, B360B www.vishay.com Vishay General Semiconductor Revision: 08-Mar-2021 2 Document Number: 89122 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas, thermal resistance RθJA - junction to ambient, RθJM - junction to mount RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B350B B360B UNIT Typical thermal resistance R θJA (1) 70 °C/WRθJM (1) 15 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B360B-E3/52T 0.096 52T 750 7" diam eter plastic tape and reel B360B-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel TM - Mount Temperature (°C) 3.0 2.0 0 75 150 Average Forward Current (A) 25 100 0.5 50 125 1.0 2.5 1.5 Resistive or Inductive Load TM Measured at Mount of Terminal Average Forward Current (A) 2.2 1.4 0 1.5 3.5 Average Power Lo ss (W) 0.5 2.0 0.2 1.0 2.5 0.6 1.8 1.0 2.0 1.2 0.4 1.6 0.8 3.0 D = tp/T t p T D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 100 1000 10000 0.1 100 Axis Title 1st line 2nd line 2nd line Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 125 °C TJ = 150 °C TJ = 25 °C TJ = -40 °C 100 1000 10000 0.000001 0.00001 0.0001 0.001 0.01 0.1 100 20 40 60 80 100 Axis Title 1st line 2nd line 2nd lineInstantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 125 °C TJ = 150 °C TJ = 25 °C TJ = -40 °C

B350B, B360B www.vishay.com Vishay General Semiconductor Revision: 08-Mar-2021 3 Document Number: 89122 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Reverse Voltage (V) 1000 0.1 100 Junction Capacitance (pF) 11 0 100 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0.180 (4.57) 0.160 (4.06) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) SMB (DO-214AA) 0 (0) Cathode Band 0.085 (2.159) MAX. 0.220 (5.59 REF. 0.086 (2.18) MIN. 0.060 (1.52) MIN. Mounting Pad Layout

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