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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B16WS S c h o t t k y Ba r r i e r D i o d e FEA TURES z Guard ring protection z Low forward voltage drop z For use in low voltage, high frequency inverters z High surge current capability Marking: SM MAXIMUM RATINGS( Ta=25 ℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Maximum recurrent peak reverse voltage 60 VRMS Maximum RMS voltage 42 VDC Maximum DC blocking voltage 60 V IF Continuous forward current 1 IFSM Non-repetitive Peak forward surge current@t=8.3ms 10 A Ptot Total power dissip ation 250 mW RθJA Thermal resistance junction to ambient air 400 ℃/W TJ Junction temperature 125 ℃ Tstg storage temperature -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test c onditions Min Typ Max Unit Maximum instantaneou s forward voltage VF I F=1A 0.7 V Maximum DC reverse current at rated DC block ing voltage IR V R=60V 0.1 mA Total capacitance Ctot V R=4V,f=1MHz 120 pF www.cj-elec.com 1 E,Mar,2015
0.1 100 1000 5 1 01 52 02 53 03 54 04 55 05 56 0 0.1 100 1000 10000 0 25 50 75 100 125 100 150 200 250 300 02468 1 0 100 150 650 0.1 Forwar d Characteristics FORWARD VOLTAG E VF (mV) FORWARD CURRENT IF (mA) Ta =25℃ Ta =100℃ Reverse C haracteristics Ta=25℃ Ta=100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Power De rating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERAT URE Ta ( )℃ Ta=25℃ f=1MHz Capacita nce Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Typical Characteristics www.cj-elec.com 2 E,Mar,2015
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