2SB1386 ROHM

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2SB1386 / 2SB1412 / 2SB1326 Transistors Rev.A 1/4 Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. zStructure Epitaxial planar type PNP silicon transistor zExternal dimensions (Unit : mm) (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2SB1386 2SB1326 2SB1412 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 (1) Emitter (2) Collector (3) Base ROHM : ATV 1.0 6.8±0.2 2.5±0.2 1.05 0.45±0.1 2.54 2.54 0.5±0.1 0.9 4.4±0.214.5±0.5 (1) (2) (3) 0.65Max. ±0.3 −0.1 +0.2 −0.05 +0.1 −0.1 +0.2 +0.2 −0.1 (3)(2)(1) 4.0 3.0±0.2 1.5±0.11.5±0.1 0.4 1.5 4.5 1.6±0.1 −0.1 +0.2 −0.1 +0.2 +0.3 −0.1 2.3±0.22.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.55±0.1 9.5±0.5 5.5 1.5±0.3 2.5 1.5 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3)(2)(1) 0.9 ∗ Denotes hFE Abbreviated symbol: BH∗

2SB1386 / 2SB1412 / 2SB1326 Transistors Rev.A 2/4 zAbsolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. Parameter VCBO VCEO VEBO PC Tj Tstg −30 V V V A(DC) −20 IC A(Pulse)−10 ∗1 0.5 W W

10 W(Tc=25°C)

−55 to 150 Symbol Limits Unit zElectrical characteristics (Ta=25°C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance ∗ Measured using pulse current. Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −30 −20 822SB1386,2SB1412 2SB1326 − ∗ 120 0.35 −0.5 −0.5 390 −1.0 VI C= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V VCE= −2V, IC= −0.5A IC/IB= −4A/ −0.1A VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz V V µA µA 120 − 390 − V MHz pF Typ. Max. Unit Conditions Transition frequency zPackaging specifications and hFE Package Code Taping Basic ordering unit (pieces) T100 TL 1000 2500 −PQR hFE 2SB1386 TV2 2500 −PQR2SB1412 −−QR2SB1326 Type hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390

2SB1386 / 2SB1412 / 2SB1326 Transistors Rev.A 3/4 zElectrical characteristic curves Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) −1m −2m −5m −10m −20m −200m −100m −50m −500m −10 −5 VCE= −2V 25°C −25°C Ta=100°C Fig.2 Grounded emitter output characteristics COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) IB=0A −20mA −25mA −30mA −10mA −5mA −15mA Ta=25°C−50mA −45mA −40mA −35mA Fig.3 DC current gain vs. collector current ( ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) Ta=25°C −2V VCE= −5V −1V 100 200 500 Fig.4 DC current gain vs. collector current ( ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) VCE= −1V 100 200 500 25°C −25°C Ta=100°C Fig.5 DC current gain vs. collector current ( ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 100 200 500 25°C −25°C Ta=100°C VCE= −2V Fig.6 Collector-emitter saturation voltage vs. collector current ( ) IC/IB=50/1 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −0.01 −0.5 −0.2 −0.1 −0.05 −0.02 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Ta=100°C 25°C lC/lB=10 −25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −0.01 −0.5 −0.2 −0.1 −0.05 −0.02 Fig.8 Collector-emitter saturation voltage vs. collector current ( ) Ta=100°C −25°C 25°C lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −0.01 −0.5 −0.2 −0.1 −0.05 −0.02 Fig.9 Collector-emitter saturation voltage vs. collector current ( ) Ta=100°C −25°C 25°C lC/lB=40 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −0.01 −0.5 −0.2 −0.1 −0.05 −0.02

2SB1386 / 2SB1412 / 2SB1326 Transistors Rev.A 4/4 Fig.10 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −0.01 −0.5 −0.2 −0.1 −0.05 −0.02 −25°C lC/lB=50 25°C Ta=100°C Fig.11 Gain bandwidth product vs. emitter current EMITTER CURRENT : IE (mA) TRANSEITION FREQUENCY : fT (MHz) 1 2 5 10 50 100 200 50020 100 200 500 1 000 1000 Ta=25°C VCE= −6V Fig.12 Collector output capacitance vs. collector-base voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) 1000 500 200 100 Ta=25°C f=1MHz IE=0A Fig.13 Emitter input capacitance vs. emitter-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) EMITTER TO BASE VOLTAGE : VEB (V) 100 200 500 1000 Ta=25°C f=1MHz IC=0A COLLECTOR TO EMITTER VOLTAGE : −VCE (V) COLLECTOR CURRENT : IC (A) 0.2 0.5 12 5 10 20 50 100 500200 200m 100m 50m 20m 10m 500m 100 Fig.14 Safe operation area F(2SB1412) DC Ta=25°C ∗Single nonrepetitive pulse Pw =10ms Pw =100ms

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.