Sensor

AUIRF2804S-7P

2 manufacturer specifications

This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating…

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Selected specification: International Rectifier

Documents: 2

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2 manufacturers / 2 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Infineon Technologies A...	-	-	1	PDF HTML	View spec
International Rectifier	-	-	1	PDF HTML	Viewing

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International Rectifier AUIRF2804S-7P overview.

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Summary

HEXFET짰 Power MOSFET

Description

This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Source title AUIRF2804S-7P Datasheet(PDF) - International Rectifier

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