ATF1040 ETC2

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Technical content

FAST SWITCHING THYRISTOR ATF1040 Repetitive voltage up to 2000 V Mean on-state current 1075 A Surge current 14 kA FINAL SPECIFICATION Turn-off time 50 µs mag 97 - ISSUE : 06 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 2000 V V RSM Non-repetitive peak reverse voltage 125 2100 V V DRM Repetitive peak off-state voltage 125 2000 V I RRM Repetitive peak reverse current V=VRRM 125 150 mA I DRM Repetitive peak off-state current V=VDRM 125 150 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz,Th=55°C, double side cooled 1075 A I T (AV) Mean on-state current 180° sin, 1 kHz,Th=55°C, double side cooled 1000 A I TSM Surge on-state current, non repetitive sine wave, 10 ms 125 14 kA I² t I² t without reverse voltage 980 x1E3 A²s V T On-state voltage On-state current = 2000 A 25 2.6 V V T(TO) Threshold voltage 125 1.40 V r T On-state slope resistance 125 0.414 mohm SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 10V 5 ohm 125 500 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0.6 µs tq Circuit commutated turn-off time di/dt = 20 A/µs, I= 1000 AI = 800 A 125 50 µs dV/dt = 200 V/µs , up to 75% VDRM Q rr Reverse recovery charge di/dt = 60 A/µs, I= 1000 AI = 1000 A 125 620 µC I rr Peak reverse recovery current VR = 50 V 227 A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=5V, tp=30µs 25 850 mA GATE V GT Gate trigger voltage VD=5V 25 3.5 V I GT Gate trigger current VD=5V 25 350 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V V FGM Peak gate voltage (forward) 25 30 V I FGM Peak gate current 25 10 A V RGM Peak gate voltage (reverse) 25 5 V P GM Peak gate power dissipation Pulse width 100 µs 25 150 W P G(AV) Average gate power dissipation 25 3 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 26 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 14.0 / 17.0 kN Mass 500 g tq code D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs ORDERING INFORMATION : ATF1040 S 20 S tq code M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs standard specification VDRM&VRRM/100 T 60 µs U 70 µs W 80 µs X 100µs Y 150µs Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori

ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 SWITCHING CHARACTERISTICS ANSALDO REVERSE RECOVERY CURRENT Tj = 125 °C 200 400 600 800 1000 0 50 100 150 200 250 300 350 di/dt [A/µs] Irr [A] 1000 A 500 A 250 A ta = Irr / (di/dt) tb = trr - ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) di/dt Irr IF ta tb Vr REVERSE RECOVERY CHARGE Tj = 125 °C 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 di/dt [A/µs] Qrr [µC] 250 A 500 A 1000 A

ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by ON-STATE CHARACTERISTIC Tj = 125 °C 500 1000 1500 2000 2500 3000 3500 On-state Voltage [V] On-state Current [A] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.001 0.01 0.1 1 10 100 t[s] Zth j-h [°C/kW] SURGE CHARACTERISTIC Tj = 125 °C 1 10 100 n° cycles ITSM [kA] ANSALDO All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.